Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires | |
Z. E. Wang; B. D. Liu; F. Yuan; T. Hu; G. F. Zhang; B. Dierre; N. Hirosaki; T. Sekiguchi; X. Jiang | |
2014 | |
发表期刊 | Journal of Luminescence
![]() |
ISSN | 0022-2313 |
卷号 | 145页码:208-212 |
摘要 | Sb/P co-doped Gallium Nitride (GaN) nanowires were synthesized via a simple chemical vapor deposition (CVD) process by heating Ga2O3 and Sb powders in NH3 atmosphere. Scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) measurements confirmed the as-synthesized products were Sb/P co-doped GaN nanowires with rough morphology and hexagonal wurtzite structure. Room temperature cathodoluminescence (CL) demonstrated that an obvious band shift of GaN nanowires can be observed due to Sb/P co-doping. Possible explanation for the growth and luminescence mechanism of Sb/P co-doped GaN nanowires was discussed. (C) 2013 Elsevier B.V. All rights reserved. |
部门归属 | [wang, zaien ; yuan, fang ; hu, tao ; zhang, guifeng] dalian univ technol, sch mat sci & engn, dalian 116024, peoples r china. [wang, zaien ; liu, baodan ; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [dierre, benjamin ; hirosaki, naoto] natl inst mat sci, sialon unit, tsukuba, ibaraki 3050044, japan. [sekiguchi, takashi] natl inst mat sci, world premier int wpi ctr mat nanoarchitecton man, tsukuba, ibaraki 3050044, japan. ; liu, bd (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; baodanliu@imr.ac.cn ; xjiang@imr.ac.cn |
关键词 | Sb/p Co-doping Gan Nanowires Synthesis Cathodoluminescence Light-emitting-diodes Visible-light d(10) Configuration Water Decomposition Optical-properties Photocatalyst Electrodes Metal Films |
URL | 查看原文 |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/72500 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Z. E. Wang,B. D. Liu,F. Yuan,et al. Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires[J]. Journal of Luminescence,2014,145:208-212. |
APA | Z. E. Wang.,B. D. Liu.,F. Yuan.,T. Hu.,G. F. Zhang.,...&X. Jiang.(2014).Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires.Journal of Luminescence,145,208-212. |
MLA | Z. E. Wang,et al."Synthesis and cathodoluminescence of Sb/P co-doped GaN nanowires".Journal of Luminescence 145(2014):208-212. |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论