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题名: Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy
作者: C. H. Yan;  H. Guo;  J. Wen;  Z. D. Zhang;  L. L. Wang;  K. He;  X. C. Ma;  S. H. Ji;  X. Chen;  Q. K. Xue
发表日期: 2014
刊名: Surface Science
相关网址: <Go to ISI>://WOS:000330909300015
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
C. H. Yan,H. Guo,J. Wen,et al. Growth Of Topological Crystalline Insulator Snte Thin Films On Si(111). Substrate By Molecular Beam Epitaxy[J]. Surface Science,2014,621:104-108.

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