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Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy
C. H. Yan; H. Guo; J. Wen; Z. D. Zhang; L. L. Wang; K. He; X. C. Ma; S. H. Ji; X. Chen; Q. K. Xue
2014
Source PublicationSurface Science
ISSN0039-6028
Volume621Pages:104-108
AbstractWe present the growth of atomically flat topological crystalline insulator (TCI) SnTe films on Si(111) substrate by molecular beam epitaxy (MBE). The growth condition for achieving high quality SnTe film was established by a combination of reflection high energy electron diffraction (RI-TEED) and scanning tunneling microscopy (STM) studies. In-situ angle resolved photoemission spectroscopy (ARPES) measurements elucidate the topological nature of the SnTe films. The electronic structure of SnTe films can be tuned by film thickness and Pb doping. The success in growing high quality SnTe thin films with tunable electronic structure is crucial for potential device applications. (C) 2013 Elsevier B.V. All rights reserved.
description.department[yan, chen-hui ; guo, hua ; wen, jing ; ji, shuai-hua ; chen, xi ; xue, qi-kun] tsinghua univ, dept phys, state key lab low dimens quantum phys, beijing 100084, peoples r china. [yan, chen-hui ; zhang, zhi-dong] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [wang, li-li ; he, ke ; ma, xu-cun] chinese acad sci, inst phys, beijing 100190, peoples r china. ; chen, x (reprint author), tsinghua univ, dept phys, state key lab low dimens quantum phys, beijing 100084, peoples r china. ; xc@mail.tsinghua.edu.cn ; qkxue@mail.tsinghua.edu.cn
KeywordTopological Crystalline Insulator Electronic Structure Molecular Beam Epitaxy Scanning Tunneling Microscopy Angle-resolved Photoemission Spectroscopy Experimental Realization Bi2se3 Bi2te3 Phase
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/72503
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
C. H. Yan,H. Guo,J. Wen,et al. Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy[J]. Surface Science,2014,621:104-108.
APA C. H. Yan.,H. Guo.,J. Wen.,Z. D. Zhang.,L. L. Wang.,...&Q. K. Xue.(2014).Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy.Surface Science,621,104-108.
MLA C. H. Yan,et al."Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy".Surface Science 621(2014):104-108.
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