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Strain-induced magnetism in MoS2 monolayer with defects
P. Tao; H. H. Guo; T. Yang; Z. D. Zhang
2014
Source PublicationJournal of Applied Physics
ISSN0021-8979
Volume115Issue:5
AbstractThe strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2 mu(B) per vacancy defect. The strain-induced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS2. (C) 2014 AIP Publishing LLC.
description.department[yang, teng] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. ; yang, t (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china. ; yangteng@imr.ac.cn
KeywordGraphene Transistors
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/72577
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
P. Tao,H. H. Guo,T. Yang,et al. Strain-induced magnetism in MoS2 monolayer with defects[J]. Journal of Applied Physics,2014,115(5).
APA P. Tao,H. H. Guo,T. Yang,&Z. D. Zhang.(2014).Strain-induced magnetism in MoS2 monolayer with defects.Journal of Applied Physics,115(5).
MLA P. Tao,et al."Strain-induced magnetism in MoS2 monolayer with defects".Journal of Applied Physics 115.5(2014).
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