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Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays
W. J. Gong; W. Liu; J. N. Feng; D. S. Kim; C. J. Choi; Z. D. Zhang
2014
Source PublicationJournal of Applied Physics
ISSN0021-8979
Volume115Issue:13
AbstractThe effect of antiferromagnetic (AFM) layer on exchange bias (EB), training effect, and magnetotransport properties in ferromagnetic (FM) /AFM nanoscale antidot arrays and sheet films Ag(10 nm)/Co(8 nm)/NiO(t(NiO))/Ag(5 nm) at 10K is studied. The AFM layer thickness dependence of the EB field shows a peak at t(NiO) = 2 nm that is explained by using the random field model. The misalignment of magnetic moments in the three-dimensional antidot arrays causes smaller decrease of EB field compared with that in the sheet films for training effect. The anomalous magnetotransport properties, in particular positive magnetoresistance (MR) for antidot arrays but negative MR for sheet films are found. The training effect and magnetotransport properties are strongly affected by the three-dimensional spin-alignment effects in the antidot arrays. (C) 2014 AIP Publishing LLC.
description.department[gong, w. j. ; liu, w. ; feng, j. n. ; zhang, z. d.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [kim, d. s. ; choi, c. j.] korea inst mat sci, funct mat div, chang won 631831, south korea. ; liu, w (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. ; wliu@imr.ac.cn
KeywordRandom-field Model Magnetic Nanostructures Anisotropy Networks
URL查看原文
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/72846
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
W. J. Gong,W. Liu,J. N. Feng,et al. Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays[J]. Journal of Applied Physics,2014,115(13).
APA W. J. Gong,W. Liu,J. N. Feng,D. S. Kim,C. J. Choi,&Z. D. Zhang.(2014).Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays.Journal of Applied Physics,115(13).
MLA W. J. Gong,et al."Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays".Journal of Applied Physics 115.13(2014).
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