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Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays
B. D. Liu; F. Yuan; B. Dierre; T. Sekiguchi; S. Zhang; Y. K. Xu; X. Jiang
2014
Source PublicationAcs Applied Materials & Interfaces
ISSN1944-8244
Volume6Issue:16Pages:14159-14166
AbstractHere, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400-800 nm, whereas the insertion of Al/Au layers in GaN-sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading. The idea using buffering/ barrier layers to isolate the dislocation threading in epitaxially grown GaN nanowires can be extended to the rational synthesis and structural defect controlling of a wide range of semiconductor films and nanostructures with superior crystal quality and excellent luminescence property.
description.department[liu, baodan ; yuan, fang ; jiang, xin] chinese acad sci, imr, shenyang natl lab mat sci, shenyang 110016, peoples r china. [dierre, benjamin ; sekiguchi, takashi] nims, ctr mat nanoarchitecton mana, wpi, tsukuba, ibaraki 3050044, japan. [zhang, song ; xu, yongkuan] china elect technol grp corp, res inst 46, tianjin 300220, peoples r china. ; liu, bd (reprint author), chinese acad sci, imr, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; baodanliu@imr.ac.cn ; xjiang@imr.ac.cn
KeywordGan Nanowire Arrays Epitaxial Growth Interface Yellow-band Emission Vapor-phase Epitaxy Gallium Nitride Spatial-distribution Luminescence Carbon Cathodoluminescence Microstructure Nanodevices Fabrication Mechanism
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Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/73295
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
B. D. Liu,F. Yuan,B. Dierre,et al. Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays[J]. Acs Applied Materials & Interfaces,2014,6(16):14159-14166.
APA B. D. Liu.,F. Yuan.,B. Dierre.,T. Sekiguchi.,S. Zhang.,...&X. Jiang.(2014).Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays.Acs Applied Materials & Interfaces,6(16),14159-14166.
MLA B. D. Liu,et al."Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays".Acs Applied Materials & Interfaces 6.16(2014):14159-14166.
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