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题名: Direct Observation of Atomic Dynamics and Silicon Doping at a Topological Defect in Graphene
作者: Z. Q. Yang;  L. C. Yin;  J. Lee;  W. C. Ren;  H. M. Cheng;  H. Q. Ye;  S. T. Pantelides;  S. J. Pennycook;  M. F. Chisholm
发表日期: 2014
刊名: Angewandte Chemie-International Edition
相关网址: <Go to ISI>://WOS:000340526400012
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
Z. Q. Yang,L. C. Yin,J. Lee,et al. Direct Observation Of Atomic Dynamics And Silicon Doping At A Topological Defect In Graphene[J]. Angewandte Chemie-international Edition,2014,53(34):8908-8912.

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