Ab initio calculations of quantum transport of Au-GaN-Au nanoscale junctions | |
T. Zhang; Y. Cheng; X. R. Chen | |
2014 | |
发表期刊 | Rsc Advances
![]() |
ISSN | 2046-2069 |
卷号 | 4期号:94页码:51838-51844 |
摘要 | We investigate the contact geometry and electronic transport properties of a GaN pair sandwiched between Au electrodes by performing density functional theory plus the non-equilibrium Green's function method. The Au-GaN-Au junction breaking process is simulated. We calculate the corresponding cohesion energy and obtain the equilibrium conductance and the projected density of states of junctions. We also calculate the pulling force of the four configurations, and the spatial electron density difference after the junction is broken. In addition, the current of junctions is computed under small bias. It is found that all junctions have large conductance showing a non-linear I-V relationship. |
部门归属 | [zhang, tian ; cheng, yan ; chen, xiang-rong] sichuan univ, coll phys sci & technol, inst atom & mol phys, chengdu 610065, peoples r china. [chen, xiang-rong] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. ; cheng, y (reprint author), sichuan univ, coll phys sci & technol, inst atom & mol phys, chengdu 610065, peoples r china. ; ycheng@scu.edu.cn ; xrchen@scu.edu.cn |
关键词 | Negative Differential Resistance Molecular-transport Conductance Pseudopotentials Device |
URL | 查看原文 |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/73499 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | T. Zhang,Y. Cheng,X. R. Chen. Ab initio calculations of quantum transport of Au-GaN-Au nanoscale junctions[J]. Rsc Advances,2014,4(94):51838-51844. |
APA | T. Zhang,Y. Cheng,&X. R. Chen.(2014).Ab initio calculations of quantum transport of Au-GaN-Au nanoscale junctions.Rsc Advances,4(94),51838-51844. |
MLA | T. Zhang,et al."Ab initio calculations of quantum transport of Au-GaN-Au nanoscale junctions".Rsc Advances 4.94(2014):51838-51844. |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论