| Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films | |
| H. L.; Cui Guo, Y.; Tian, Q. W.; Gao, S.; Wang, G.; Pan, D. C. | |
| 2015 | |
| Source Publication | Crystal Growth & Design
 |
| ISSN | 1528-7483 |
| Volume | 15Issue:2Pages:771-777 |
| Abstract | The Cu2ZnSn(S,Se)(4) (CZTSSe) has gained extensive attention in thin film solar cells due to their potential as a nontoxic, low-cost, and earth-abundant absorber material, and a rapid increase in power conversion efficiencies has been demonstrated in laboratory. Compared with the most successful hydrazine-based solution process, the nanocrystal-based ink method and non-hydrazine molecular precursor solution approach are more eco-friendly for fabricating high-efficiency CZTSSe solar cells. However, it is hard to obtain a complete large-grain CZTSSe absorber thin film which can facilitate the transport of photogenerated carriers while minimize grain boundary recombination. Here, we present a simple and effective strategy to significantly enhance grain growth of CZTSSe absorber layers by insetting Sb2S3, CuSbS2, and NaSb5S8 thin films. The incorporation of Sb-based thin films can induce grain growth in the selenization process, and did not produce the impurity phase confirmed by XRD patterns and Raman spectra. It was found that the order of the crystal growth promotion ability is Sb2S3 > CuSbS2 > NaSb5S8 under the same experimental conditions. The presented approach can be extended to other solution processes of fabricating CZTSSe solar cells to enhance their microstructural properties, which are critical for applications in CZTSSe absorbers with fine-grain layers. |
| description.department | [guo, hongling ; tian, qingwen ; wang, gang ; pan, daocheng] chinese acad sci, changchun inst appl chem, state key lab rare earth resource utilizat, changchun 130022, jilin, peoples r china. [guo, hongling ; gao, shang] changchun univ sci & technol, changchun 130022, jilin, peoples r china. [cui, yong] chinese acad sci, shenyang r&d ctr lab mat sci, inst met res, shenyang 110016, peoples r china. ; wang, g (reprint author), chinese acad sci, changchun inst appl chem, state key lab rare earth resource utilizat, 5625 renmin st, changchun 130022, jilin, peoples r china. ; wsu@ciac.ac.cn ; pan@ciac.ac.cn |
| Keyword | Sol-gel Route Cells Fabrication Efficiency Photovoltaics Nanocrystals Versatile |
| URL | 查看原文 |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/73805 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | H. L.,Cui Guo, Y.,Tian, Q. W.,et al. Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films[J]. Crystal Growth & Design,2015,15(2):771-777. |
| APA | H. L.,Cui Guo, Y.,Tian, Q. W.,Gao, S.,Wang, G.,&Pan, D. C..(2015).Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films.Crystal Growth & Design,15(2),771-777. |
| MLA | H. L.,et al."Significantly Enhancing Grain Growth in Cu2ZnSn(S,Se)(4) Absorber Layers by Insetting Sb2S3, CuSbS2, and NaSb5S8 Thin Films".Crystal Growth & Design 15.2(2015):771-777. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment