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Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition
T.; Ren Ma, W. C.; Liu, Z. B.; Huang, L.; Ma, L. P.; Ma, X. L.; Zhang, Z. Y.; Peng, L. M.; Cheng, H. M.
2014
Source PublicationAcs Nano
ISSN1936-0851
Volume8Issue:12Pages:12806-12813
AbstractReducing nucleation density and healing structural defects are two challenges for fabricating large-area high-quality single-crystal graphene, which is essential for its electronic and optoelectronic applications. We have developed a method involving chemical vapor deposition (CVD) growth followed by repeated etchingregrowth, to solve both problems at once. Using this method, we can obtain single-crystal graphene domains with a size much larger than that allowed by the nucleation density in the initial growth and efficiently heal structural defects similar to graphitization but at a much lower temperature, both of which are impossible to realize by conventional CVD. Using this method with Pt as a growth substrate, we have grown similar to 3 mm defect-free single-crystal graphene domains with a carrier mobility up to 13 000 cm(2) V-1 s(-1) under ambient conditions.
description.department[ma, teng ; ren, wencai ; liu, zhibo ; ma, lai-peng ; ma, xiuliang ; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [huang, le ; zhang, zhiyong ; peng, lan-mao] peking univ, key lab phys & chem nanodevices, beijing 100871, peoples r china. [huang, le ; zhang, zhiyong ; peng, lan-mao] peking univ, dept elect, beijing 100871, peoples r china. ; ren, wc (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china. ; wcren@imr.ac.cn
KeywordGraphene Single Crystal Large Size Defect Free Chemical Vapor Deposition Thin Carbon-films Grain-boundaries Polycrystalline Graphene Controllable Synthesis Monolayer Graphene Bilayer Graphene Copper Surface Strength Graphitization Hydrogen
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Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/73884
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
T.,Ren Ma, W. C.,Liu, Z. B.,et al. Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition[J]. Acs Nano,2014,8(12):12806-12813.
APA T..,Ren Ma, W. C..,Liu, Z. B..,Huang, L..,Ma, L. P..,...&Cheng, H. M..(2014).Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition.Acs Nano,8(12),12806-12813.
MLA T.,et al."Repeated Growth-Etching-Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition".Acs Nano 8.12(2014):12806-12813.
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