Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO3 thin films

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	Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO3 thin films
	X. K.; Wang Ning, Z. J.; Zhang, Z. D.
	2015
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	117 期号:9
摘要	SrRuO3 (SRO) thin films with different thickness (2-70 nm) have been grown on (001), (110), and (111) SrTiO3 substrates. The (001)-SRO films (2-8 nm) exhibited smooth flat surfaces whereas the (110)- and (111)-SRO films featured a faceted island structure. Room temperature resistivity and residual resistivity are the lowest for the (111)-SRO films (30-70 nm). Over all thicknesses, we observed enhanced magnetization in the (111)-SRO films (similar to 4 mu(B)/Ru) compared with that for the (001)- and (110)-SRO films (similar to 2 mu(B)/Ru and similar to 3 mu(B)/Ru, respectively), suggesting a low-spin state t(2g)(3 up arrow, 1 down arrow), high-spin state t(2g)(3 up arrow)e(g)(1 up arrow), and mixed low- and high-spin states for the (001)-, (111)-, and (110)-SRO films, respectively. The dependence of resistivity on temperatures near T-C follows a power law with exponent beta = 0.312 and beta = 0.363 for the (110)- and (111)-SRO films, respectively. These critical exponents are consistent with magnetic data with scaling law M = C (T-C - T)(beta). At low temperatures, dM/dT and d rho/dT show a linear relationship in the temperature range for the Fermi liquid. These results suggest that the intrinsic electrical and magnetic transport properties are coupled. (C) 2015 AIP Publishing LLC.
部门归属	[ning, x. k. ; wang, z. j. ; zhang, z. d.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. ; wang, zj (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; wangzj@imr.ac.cn
关键词	Conductivity Temperature Growth Strain Si
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/73892
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. K.,Wang Ning, Z. J.,Zhang, Z. D.. Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO3 thin films[J]. Journal of Applied Physics,2015,117(9).
APA	X. K.,Wang Ning, Z. J.,&Zhang, Z. D..(2015).Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO3 thin films.Journal of Applied Physics,117(9).
MLA	X. K.,et al."Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO3 thin films".Journal of Applied Physics 117.9(2015).