| Dislocation-Induced Nanoparticle Decoration on a GaN Nanowire | |
| B.; Yuan Yang, F.; Liu, Q. Y.; Huang, N.; Qiu, J. H.; Staedler, T.; Liu, B. D.; Jiang, X. | |
| 2015 | |
| Source Publication | Acs Applied Materials & Interfaces
 |
| ISSN | 1944-8244 |
| Volume | 7Issue:4Pages:2790-2796 |
| Abstract | GaN nanowires with homoepitaxial decorated GaN nanoparticles on their surface along the radial direction have been synthesized by means of a chemical vapor deposition method. The growth of GaN nanowires is catalyzed by Au particles via the vaporliquidsolid (VLS) mechanism. Screw dislocations are generated along the radial direction of the nanowires under slight Zn doping. In contrast to the metal-catalyst-assisted VLS growth, GaN nanoparticles are found to prefer to nucleate and grow at these dislocation sites. High-resolution transmission electron microscopy (HRTEM) analysis demonstrates that the GaN nanoparticles possess two types of epitaxial orientation with respect to the corresponding GaN nanowire: (I) [(1) over bar2 (1) over bar0](np)//[(1) over bar2 (1) over bar0](nw), (0001)(np)//(0001)(nw); (II) [(1) over bar2 (1) over bar3](np)//[1 (2) over bar 10](nw), (10 (1) over bar0)(np)//(10 (1) over bar0)(nw). An increased Ga signal in the energy-dispersive spectroscopy (EDS) profile lines of the nanowires suggests GaN nanoparticle growth at the edge surface of the wires. All the crystallographic results confirm the importance of the dislocations with respect to the homoepitaxial growth of the GaN nanoparticles. Here, screw dislocations situated on the (0001) plane provide the self-step source to enable nucleation of the GaN nanoparticles. |
| description.department | [yang, bing ; yuan, fang ; liu, qingyun ; huang, nan ; qiu, jianhang ; liu, baodan ; jiang, xin] chinese acad sci, imr, shenyang natl lab mat sci, shenyang 110016, peoples r china. [staedler, thorsten ; jiang, xin] univ siegen, inst mat engn, d-57076 siegen, germany. ; liu, bd (reprint author), chinese acad sci, imr, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china. ; baodanliu@imr.ac.cn ; xjiang@imr.ac.cn |
| Keyword | Gan Nanostructures Dislocation Nucleation Growth Oxide Nanowires Growth-process Thin-films Morphology Heterojunctions Microstructure Nanostructures Emission Nanorods Arrays |
| URL | 查看原文 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/73996 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | B.,Yuan Yang, F.,Liu, Q. Y.,et al. Dislocation-Induced Nanoparticle Decoration on a GaN Nanowire[J]. Acs Applied Materials & Interfaces,2015,7(4):2790-2796. |
| APA | B..,Yuan Yang, F..,Liu, Q. Y..,Huang, N..,Qiu, J. H..,...&Jiang, X..(2015).Dislocation-Induced Nanoparticle Decoration on a GaN Nanowire.Acs Applied Materials & Interfaces,7(4),2790-2796. |
| MLA | B.,et al."Dislocation-Induced Nanoparticle Decoration on a GaN Nanowire".Acs Applied Materials & Interfaces 7.4(2015):2790-2796. |
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