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P在IN706合金中的晶界偏聚与析出规律
章莎; 信昕; 孙文儒; 孙晓峰
2015-05-20
Source Publication第十三届中国高温合金年会摘要文集
Abstract研究了P含量为0.002~40.025%(质量分数)的6种IN706合金均匀化组织中P的晶界偏聚及析出规律。结果表明:合金经1190℃均匀化后,P偏聚于晶界,合金中不析出含P相;在7200~1080℃保温5h保温后,含P相在0.010%P及以上P含量合金的晶界析出,其析出温度范围为850~1010℃,析出峰温度为98℃。此外,运用TEM确定了含P相的结构。
description.department中国科学院金属研究所
KeywordIn706 匀化 析出规律 真空感应炉熔炼 温度范围 原子态 重熔 均匀化处理 Sims 实验条件
Document Type会议论文
Identifierhttp://ir.imr.ac.cn/handle/321006/74543
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
章莎,信昕,孙文儒,等. P在IN706合金中的晶界偏聚与析出规律[C],2015.
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