|A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment|
|Wu, Zefei; Guo, Yanqing; Guo, Yuzheng; Huang, Rui; Xu, Shuigang; Song, Jie; Lu, Huanhuan; Lin, Zhenxu; Han, Yu; Li, Hongliang; Han, Tianyi; Lin, Jiangxiazi; Wu, Yingying; Long, Gen; Cai, Yuan; Cheng, Chun; Su, Dangsheng; Robertson, John; Wang, Ning; firstname.lastname@example.org; email@example.com
|Abstract||The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment (RTT) method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of a solid carbon layer/copperfilm/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to graphene growth on SiO2/Si. The produced graphene exhibits a high carrier mobility of up to 3000 cm(2) V-1 s(-1) at room temperature and standard half-integer quantum oscillations. Our work provides a promising simple transfer-free approach using solid carbon sources to obtain high-quality graphene for practical applications.|
; xu, shuigang
; lu, huanhuan
; han, yu
; han, tianyi
; lin, jiangxiazi
; wu, yingying
; long, gen
; cai, yuan
; wang, ning] hong kong univ sci & technol, dept phys, hong kong, hong kong, peoples r china
; [guo, yanqing
; huang, rui
; song, jie
; lin, zhenxu
; li, hongliang] hanshan normal univ, dept phys & elect engn, chaozhou, peoples r china
; [guo, yuzheng
; huang, rui
; robertson, john] univ cambridge, dept engn, cambridge cb2 1pz, england
; [cheng, chun] south univ sci & technol china, dept mat sci & engn, shenzhen, peoples r china
; [su, dangsheng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
|Funding Organization||Research Grants Council of Hong Kong [N_HKUST613/12, 604112, 16302215]; NSF of China ; NSF of Guangdong Province [2015A030313871]; CRF project [HKU9/CRF/13G]; Raith-HKUST Nanotechnology Laboratory for the electron-beam lithography facility [SEG HKUST08]
|Corresponding Authorfirstname.lastname@example.org; email@example.com|
Wu, Zefei,Guo, Yanqing,Guo, Yuzheng,et al. A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment[J]. NANOSCALE,2016,8(5):2594-2600.
Wu, Zefei.,Guo, Yanqing.,Guo, Yuzheng.,Huang, Rui.,Xu, Shuigang.,...&firstname.lastname@example.org.(2016).A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment.NANOSCALE,8(5),2594-2600.
Wu, Zefei,et al."A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment".NANOSCALE 8.5(2016):2594-2600.
|Files in This Item:||
||There are no files associated with this item.
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.