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A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment
Wu, Zefei; Guo, Yanqing; Guo, Yuzheng; Huang, Rui; Xu, Shuigang; Song, Jie; Lu, Huanhuan; Lin, Zhenxu; Han, Yu; Li, Hongliang; Han, Tianyi; Lin, Jiangxiazi; Wu, Yingying; Long, Gen; Cai, Yuan; Cheng, Chun; Su, Dangsheng; Robertson, John; Wang, Ning; rhuang@hstc.edu.cn; phwang@ust.hk
2016
Source PublicationNANOSCALE
ISSN2040-3364
Volume8Issue:5Pages:2594-2600
AbstractThe transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment (RTT) method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of a solid carbon layer/copperfilm/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to graphene growth on SiO2/Si. The produced graphene exhibits a high carrier mobility of up to 3000 cm(2) V-1 s(-1) at room temperature and standard half-integer quantum oscillations. Our work provides a promising simple transfer-free approach using solid carbon sources to obtain high-quality graphene for practical applications.
description.department[wu, zefei ; xu, shuigang ; lu, huanhuan ; han, yu ; han, tianyi ; lin, jiangxiazi ; wu, yingying ; long, gen ; cai, yuan ; wang, ning] hong kong univ sci & technol, dept phys, hong kong, hong kong, peoples r china ; [guo, yanqing ; huang, rui ; song, jie ; lin, zhenxu ; li, hongliang] hanshan normal univ, dept phys & elect engn, chaozhou, peoples r china ; [guo, yuzheng ; huang, rui ; robertson, john] univ cambridge, dept engn, cambridge cb2 1pz, england ; [cheng, chun] south univ sci & technol china, dept mat sci & engn, shenzhen, peoples r china ; [su, dangsheng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
Funding OrganizationResearch Grants Council of Hong Kong [N_HKUST613/12, 604112, 16302215]; NSF of China [61274140]; NSF of Guangdong Province [2015A030313871]; CRF project [HKU9/CRF/13G]; Raith-HKUST Nanotechnology Laboratory for the electron-beam lithography facility [SEG HKUST08]
Indexed Bysci
Language英语
WOS IDWOS:000369591400013
Citation statistics
Cited Times:16[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/74586
Collection中国科学院金属研究所
Corresponding Authorrhuang@hstc.edu.cn; phwang@ust.hk
Recommended Citation
GB/T 7714
Wu, Zefei,Guo, Yanqing,Guo, Yuzheng,et al. A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment[J]. NANOSCALE,2016,8(5):2594-2600.
APA Wu, Zefei.,Guo, Yanqing.,Guo, Yuzheng.,Huang, Rui.,Xu, Shuigang.,...&phwang@ust.hk.(2016).A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment.NANOSCALE,8(5),2594-2600.
MLA Wu, Zefei,et al."A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment".NANOSCALE 8.5(2016):2594-2600.
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