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Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films
Wang, W. Y.; Tang, Y. L.; Zhu, Y. L.; Suriyaprakash, J.; Xu, Y. B.; Liu, Y.; Gao, B.; Cheong, S-W.; Ma, X. L.; ylzhu@imr.ac.cn; xlma@imr.ac.cn
2015
Source PublicationSCIENTIFIC REPORTS
ISSN2045-2322
Volume5Pages:-
AbstractDoped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a <111>. Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.
description.department[wang, w. y. ; tang, y. l. ; zhu, y. l. ; suriyaprakash, j. ; xu, y. b. ; liu, y. ; ma, x. l.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [gao, b. ; cheong, s-w.] rutgers state univ, rutgers ctr emergent mat, piscataway, nj 08854 usa ; [gao, b. ; cheong, s-w.] rutgers state univ, dept phys & astron, piscataway, nj 08854 usa
Funding OrganizationNational Natural Science Foundation of China [51231007, 51171190]; National Basic Research Program of China [2014CB921002, 2009CB623705]; Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4413]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/74646
Collection中国科学院金属研究所
Corresponding Authorylzhu@imr.ac.cn; xlma@imr.ac.cn
Recommended Citation
GB/T 7714
Wang, W. Y.,Tang, Y. L.,Zhu, Y. L.,et al. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films[J]. SCIENTIFIC REPORTS,2015,5:-.
APA Wang, W. Y..,Tang, Y. L..,Zhu, Y. L..,Suriyaprakash, J..,Xu, Y. B..,...&xlma@imr.ac.cn.(2015).Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.SCIENTIFIC REPORTS,5,-.
MLA Wang, W. Y.,et al."Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films".SCIENTIFIC REPORTS 5(2015):-.
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