Copper Bottom-up Filling for Through Silicon Via (TSV) Using Single JGB Additive

IMR OpenIR

	Copper Bottom-up Filling for Through Silicon Via (TSV) Using Single JGB Additive
	Tang, J.; Zhu, Q. S.; Zhang, Y.; Zhang, X.; Guo, J. D.; Shang, J. K.; qszhu@imr.ac.cn
	2015
发表期刊	ECS ELECTROCHEMISTRY LETTERS
ISSN	2162-8726
卷号	4 期号:9 页码:D28-D30
摘要	A copper electroplating using single JGB additive was developed for through silicon via (TSV) filling. The micro-vias were perfectly void-free filled by single JGB additive. The electrochemical analysis demonstrated a "bottom-up" deposition mode by single JGB additive. The "V" shaped filling was attributed to JGB gradient suppressing effect along themicro-via depth. The filled microstructure by single JGB mainly contained fine equiaxed grains while the filled microstructure by PEG-SPS additive contained large columnar grains. (C) 2015 The Electrochemical Society. All rights reserved.
部门归属	[tang, j. ; zhu, q. s. ; zhang, x. ; guo, j. d. ; shang, j. k.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [zhang, y.] natl inst adv ind sci & technol, tsukuba, ibaraki 3058564, japan
资助者	National Natural Science Foundation of China (NSFC) [51471180]; NSFC [51101161, 51171191]
收录类别	sci
语种	英语
WOS记录号	WOS:000358182700007
引用统计	被引频次：40[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/74684
专题	中国科学院金属研究所
通讯作者	qszhu@imr.ac.cn
推荐引用方式 GB/T 7714	Tang, J.,Zhu, Q. S.,Zhang, Y.,et al. Copper Bottom-up Filling for Through Silicon Via (TSV) Using Single JGB Additive[J]. ECS ELECTROCHEMISTRY LETTERS,2015,4(9):D28-D30.
APA	Tang, J..,Zhu, Q. S..,Zhang, Y..,Zhang, X..,Guo, J. D..,...&qszhu@imr.ac.cn.(2015).Copper Bottom-up Filling for Through Silicon Via (TSV) Using Single JGB Additive.ECS ELECTROCHEMISTRY LETTERS,4(9),D28-D30.
MLA	Tang, J.,et al."Copper Bottom-up Filling for Through Silicon Via (TSV) Using Single JGB Additive".ECS ELECTROCHEMISTRY LETTERS 4.9(2015):D28-D30.