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Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures
Liu, Baodan; Yang, Bing; Yuan, Fang; Liu, Qingyun; Shi, Dan; Jiang, Chunhai; Zhang, Jinsong; Staedler, Thorsten; Jiang, Xin; baodanliu@hotmail.com; xjiang@imr.ac.cn
2015
Source PublicationNANO LETTERS
ISSN1530-6984
Volume15Issue:12Pages:7837-7846
AbstractIn this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of similar to 100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nano-wires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SIC featuring a crystallographic relationship of [1 (2) over bar 10](WZ-GaN) //[01 (1) over bar](3C-SiC) (0001)(WZ-GaN)// (111)(3C-SiC) and d(WZ-GaN)(000l) approximate to 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting and environment processing.
description.department[liu, baodan ; yang, bing ; yuan, fang ; liu, qingyun ; shi, dan ; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci synl, shenyang 110016, peoples r china ; [jiang, chunhai ; zhang, jinsong] chinese acad sci, inst met res, mat fabricat & proc div, shenyang 110016, peoples r china ; [staedler, thorsten ; jiang, xin] univ siegen, inst mat engn, d-57076 siegen, germany
KeywordWurtzite Gan 3c-sic Core-shell Heterostructure Stacking Faults Confined Epitaxial Growth
Funding OrganizationKnowledge Innovation Program of Institute of Metal Research [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Chinese Scholarship Council [201400260067]; National Nature Science Foundation of China [51402309]; DAAD [57054770]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/74707
Collection中国科学院金属研究所
Corresponding Authorbaodanliu@hotmail.com; xjiang@imr.ac.cn
Recommended Citation
GB/T 7714
Liu, Baodan,Yang, Bing,Yuan, Fang,et al. Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures[J]. NANO LETTERS,2015,15(12):7837-7846.
APA Liu, Baodan.,Yang, Bing.,Yuan, Fang.,Liu, Qingyun.,Shi, Dan.,...&xjiang@imr.ac.cn.(2015).Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.NANO LETTERS,15(12),7837-7846.
MLA Liu, Baodan,et al."Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures".NANO LETTERS 15.12(2015):7837-7846.
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