Direct writing of graphene patterns and devices on graphene oxide films by inkjet reduction

IMR OpenIR

	Direct writing of graphene patterns and devices on graphene oxide films by inkjet reduction
	Su, Yang; Jia, Shuai; Du, Jinhong; Yuan, Jiangtan; Liu, Chang; Ren, Wencai; Cheng, Huiming; jhdu@imr.ac.cn; cheng@imr.ac.cn
	2015
发表期刊	NANO RESEARCH
ISSN	1998-0124
卷号	8 期号:12 页码:3954-3962
摘要	Direct writing of graphene patterns and devices may significantly facilitate the application of graphene-based flexible electronics. In terms of scalability and cost efficiency, inkjet printing is very competitive over other existing directwriting methods. However, it has been challenging to obtain highly stable and clog-free graphene-based ink. Here, we report an alternative and highly efficient technique to directly print a reducing reagent on graphene oxide film to form conductive graphene patterns. By this "inkjet reduction" method, without using any other microfabrication technique, conductive graphene patterns and devices for various applications are obtained. The ionic nature of the reductant ink makes it clog-free and stable for continuous and large-area printing. The method shows self-limited reduction feature, which enables electrical conductivity of graphene patterns to be tuned within 5 orders of magnitude, reaching as high as 8,000 S center dot m(-1). Furthermore, this method can be extended to produce noble metal/graphene composite patterns. The devices, including transistors, biosensors, and surfaceenhanced Raman scattering substrates, demonstrate excellent functionalities. This work provides a new strategy to prepare large-area graphene-based devices that is low-cost and highly efficient, promising to advance research on graphenebased flexible electronics.
部门归属	[su, yang ; jia, shuai ; du, jinhong ; yuan, jiangtan ; liu, chang ; ren, wencai ; cheng, huiming] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china
关键词	Graphene Graphene Oxide Direct Writing Inkjet Printing Reduction
资助者	National High-tech R&D Program of China [2012AA030303]; Chinese Academy of Sciences [KGZD-EW-303-3]; National Natural Science Foundation of China [51221264]; Graduate School of the Chinese Academy of Sciences (Program of Innovation of Sciences and Technology for Graduate Students)
收录类别	sci
语种	英语
WOS记录号	WOS:000367003400021
引用统计	被引频次：35[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/74724
专题	中国科学院金属研究所
通讯作者	jhdu@imr.ac.cn; cheng@imr.ac.cn
推荐引用方式 GB/T 7714	Su, Yang,Jia, Shuai,Du, Jinhong,et al. Direct writing of graphene patterns and devices on graphene oxide films by inkjet reduction[J]. NANO RESEARCH,2015,8(12):3954-3962.
APA	Su, Yang.,Jia, Shuai.,Du, Jinhong.,Yuan, Jiangtan.,Liu, Chang.,...&cheng@imr.ac.cn.(2015).Direct writing of graphene patterns and devices on graphene oxide films by inkjet reduction.NANO RESEARCH,8(12),3954-3962.
MLA	Su, Yang,et al."Direct writing of graphene patterns and devices on graphene oxide films by inkjet reduction".NANO RESEARCH 8.12(2015):3954-3962.