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Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)
Yang, L.; Wang, Z. H.; Zhang, Z. D.; zhwang@imr.ac.cn
2016
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume119Issue:4Pages:-
AbstractNiAs-type manganese telluride (MnTe) films with preferred crystallographic plane of (110) were prepared on Si/SiO2 substrates by pulsed laser deposition. X-ray diffraction (XRD) of the films was studied at different temperatures. The XRD peak of MnTe (110) films shifts to higher angle with decreasing temperature, showing the decrease of the lattice parameter. Resistivity of the films was studied in the temperature range of 2-350 K. The bump between 150 and 250K was observed in the films, which may be related to the special s-d and p-d overlaps induced by the compressed lattice. The magnon drag effect near its Neel temperature T-N and enlarged magnetic-elastic coupling below 100K were observed and analyzed in details. (C) 2016 AIP Publishing LLC.
description.department[yang, l. ; wang, z. h. ; zhang, z. d.] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china
Funding OrganizationNational Natural Science Foundation of China [51331006, 51522104]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/74805
Collection中国科学院金属研究所
Corresponding Authorzhwang@imr.ac.cn
Recommended Citation
GB/T 7714
Yang, L.,Wang, Z. H.,Zhang, Z. D.,et al. Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)[J]. JOURNAL OF APPLIED PHYSICS,2016,119(4):-.
APA Yang, L.,Wang, Z. H.,Zhang, Z. D.,&zhwang@imr.ac.cn.(2016).Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110).JOURNAL OF APPLIED PHYSICS,119(4),-.
MLA Yang, L.,et al."Electrical properties of NiAs-type MnTe films with preferred crystallographic plane of (110)".JOURNAL OF APPLIED PHYSICS 119.4(2016):-.
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