Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier

IMR OpenIR

	Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier
	Wang, Hailing; Bai, Yu; Ning, Xingkun; Wang, Zhanjie; wangzj@imr.ac.cn
	2015
发表期刊	RSC ADVANCES
ISSN	2046-2069
卷号	5 期号:126 页码:104203-104209
摘要	Metal-conductive oxide nanocomposite thin films are regarded as promising electrodes for ferroelectric devices to overcome the intrinsic drawbacks of conventional metal or conductive oxides electrodes. In this work, ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films with a thickness of 240 nm were deposited on metal-conductive oxide nanocomposite Au-LaNiO3 (Au-LNO) electrodes by a sol-gel method, and their microstructure and ferroelectric properties were investigated. It was observed that the PZT thin films fabricated on the Au-LNO bottom electrode exhibited enhanced ferroelectricity with the remnant polarization as high as 59.6 mu C cm(-2), which was much larger than those on the Pt (20 mu C cm(-2)) and the LNO (33 mu C cm(-2)) bottom electrodes. The J-V characteristics fitted by the Schottky emission model revealed the lowest potential barrier height at the interface between the PZT thin film and the Au-LNO electrode. The low potential barrier height contributed to a thin spacing charge layer at the PZT/Au-LNO interface, which was beneficial to the switching of ferroelectric domains. Ultraviolet photoelectron spectroscopy (UPS) results revealed that the decrease of the Schottky potential barrier was understood by the different work functions of the bottom electrodes according to the semiconductor theory. The present work demonstrates that metal-oxide nanocomposite electrodes can effectively improve the electrical properties of ferroelectric films by modulation of the Schottky potential barrier height. In particular, the modulation of the Schottky potential barrier by using nanocomposite electrodes also provides meaningful guidance for designing high performance ferroelectric photovoltaic devices.
部门归属	[wang, hailing ; bai, yu ; ning, xingkun ; wang, zhanjie] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
资助者	Hundred Talents Program of Chinese Academy of Sciences; National Natural Science of foundation of China [51172238]
收录类别	sci
语种	英语
WOS记录号	WOS:000366433700053
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/74821
专题	中国科学院金属研究所
通讯作者	wangzj@imr.ac.cn
推荐引用方式 GB/T 7714	Wang, Hailing,Bai, Yu,Ning, Xingkun,et al. Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier[J]. RSC ADVANCES,2015,5(126):104203-104209.
APA	Wang, Hailing,Bai, Yu,Ning, Xingkun,Wang, Zhanjie,&wangzj@imr.ac.cn.(2015).Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier.RSC ADVANCES,5(126),104203-104209.
MLA	Wang, Hailing,et al."Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO3 nanocomposite electrodes via modulation of Schottky potential barrier".RSC ADVANCES 5.126(2015):104203-104209.