Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors | |
Lyu, Hongming; Lu, Qi; Huang, Yilin; Ma, Teng; Zhang, Jinyu; Wu, Xiaoming; Yu, Zhiping; Ren, Wencai; Cheng, Hui-Ming; Wu, Huaqiang; Qian, He; holyu@ucsd.edu; wuhq@tsinghua.edu.cn | |
2015 | |
发表期刊 | SCIENTIFIC REPORTS
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ISSN | 2045-2322 |
卷号 | 5页码:- |
摘要 | Ever since its discovery, graphene bears great expectations in high frequency electronics due to its irreplaceably high carrier mobility. However, it has long been blamed for the weakness in generating gains, which seriously limits its pace of development. Distributed amplification, on the other hand, has successfully been used in conventional semiconductors to increase the amplifiers' gain-bandwidth product. In this paper, distributed amplification is first applied to graphene. Transmission lines phase-synchronize paralleled graphene field-effect transistors (GFETs), combining the gain of each stage in an additive manner. Simulations were based on fabricated GFETs whose f(T) ranged from 8.5 GHz to 10.5 GHz and f(max) from 12 GHz to 14 GHz. A simulated four-stage graphene distributed amplifier achieved up to 4 dB gain and 3.5 GHz bandwidth, which could be realized with future IC processes. A PCB level graphene distributed amplifier was fabricated as a proof of circuit concept. |
部门归属 | [lyu, hongming ; lu, qi ; huang, yilin ; zhang, jinyu ; wu, xiaoming ; yu, zhiping ; wu, huaqiang ; qian, he] tsinghua univ, inst microelect, beijing 100084, peoples r china ; [wu, huaqiang ; qian, he] tnlist, beijing, peoples r china ; [lyu, hongming] univ calif san diego, dept elect & comp engn, la jolla, ca 92093 usa ; [ma, teng ; ren, wencai ; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china |
资助者 | National Science and Technology Major Project [2011ZX02707]; National Basic Research Program [2011CBA00600, 2013CBA01604]; National Natural Science Foundation [61474072] |
收录类别 | sci |
语种 | 英语 |
WOS记录号 | WOS:000365863800001 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/74866 |
专题 | 中国科学院金属研究所 |
通讯作者 | holyu@ucsd.edu; wuhq@tsinghua.edu.cn |
推荐引用方式 GB/T 7714 | Lyu, Hongming,Lu, Qi,Huang, Yilin,et al. Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors[J]. SCIENTIFIC REPORTS,2015,5:-. |
APA | Lyu, Hongming.,Lu, Qi.,Huang, Yilin.,Ma, Teng.,Zhang, Jinyu.,...&wuhq@tsinghua.edu.cn.(2015).Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors.SCIENTIFIC REPORTS,5,-. |
MLA | Lyu, Hongming,et al."Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors".SCIENTIFIC REPORTS 5(2015):-. |
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