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Linear magnetoresistance versus weak antilocalization effects in Bi2Te3
Wang, Zhenhua; Yang, Liang; Zhao, Xiaotian; Zhang, Zhidong; Gao, Xuan P. A.; zhwang@imr.ac.cn; xuan.gao@case.edu
2015
Source PublicationNANO RESEARCH
ISSN1998-0124
Volume8Issue:9Pages:2963-2969
AbstractIn chalcogenide topological insulator materials, two types of magnetoresistance (MR) effects are widely discussed: a sharp MR dip around zero magnetic field, associated with the weak antilocalization (WAL) effect, and a linear MR (LMR) effect that generally persists to high fields and high temperatures. We have studied the MR of thin films of the topological insulator Bi2Te3 from the metallic to semiconducting transport regime. In the metallic samples, the WAL is difficult to identify owing to the low magnitude of the WAL compared to the samples' conductivity. Furthermore, the sharp WAL dip in the MR is clearly present in samples with a higher resistivity. To correctly account for the low-field MR with the quantitative theory of the WAL according to the Hikami-Larkin-Nagaoka (HLN) model, we find that the classical (linear) MR effect should be taken into account in combination with the WAL quantum correction. Otherwise, the WAL fitting alone yields an unrealistically large coefficient alpha in the HLN analysis. This work clarifies the WAL and LMR as two distinct effects and offers an explanation for the overly large alpha in the WAL analysis of topological insulators in some studies.
description.department[wang, zhenhua ; yang, liang ; zhao, xiaotian ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [gao, xuan p. a.] case western reserve univ, dept phys, cleveland, oh 44106 usa
KeywordLinear Magnetoresistance Weak Antilocalization Bi2te3 Films Topological Insulators
Funding OrganizationNSF [DMR-1151534]; IMR, Chinese Academy of Sciences; National Natural Science Foundation of China [51331006]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/74941
Collection中国科学院金属研究所
Corresponding Authorzhwang@imr.ac.cn; xuan.gao@case.edu
Recommended Citation
GB/T 7714
Wang, Zhenhua,Yang, Liang,Zhao, Xiaotian,et al. Linear magnetoresistance versus weak antilocalization effects in Bi2Te3[J]. NANO RESEARCH,2015,8(9):2963-2969.
APA Wang, Zhenhua.,Yang, Liang.,Zhao, Xiaotian.,Zhang, Zhidong.,Gao, Xuan P. A..,...&xuan.gao@case.edu.(2015).Linear magnetoresistance versus weak antilocalization effects in Bi2Te3.NANO RESEARCH,8(9),2963-2969.
MLA Wang, Zhenhua,et al."Linear magnetoresistance versus weak antilocalization effects in Bi2Te3".NANO RESEARCH 8.9(2015):2963-2969.
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