Linear magnetoresistance versus weak antilocalization effects in Bi2Te3

IMR OpenIR

	Linear magnetoresistance versus weak antilocalization effects in Bi2Te3
	Wang, Zhenhua; Yang, Liang; Zhao, Xiaotian; Zhang, Zhidong; Gao, Xuan P. A.; zhwang@imr.ac.cn; xuan.gao@case.edu
	2015
发表期刊	NANO RESEARCH
ISSN	1998-0124
卷号	8 期号:9 页码:2963-2969
摘要	In chalcogenide topological insulator materials, two types of magnetoresistance (MR) effects are widely discussed: a sharp MR dip around zero magnetic field, associated with the weak antilocalization (WAL) effect, and a linear MR (LMR) effect that generally persists to high fields and high temperatures. We have studied the MR of thin films of the topological insulator Bi2Te3 from the metallic to semiconducting transport regime. In the metallic samples, the WAL is difficult to identify owing to the low magnitude of the WAL compared to the samples' conductivity. Furthermore, the sharp WAL dip in the MR is clearly present in samples with a higher resistivity. To correctly account for the low-field MR with the quantitative theory of the WAL according to the Hikami-Larkin-Nagaoka (HLN) model, we find that the classical (linear) MR effect should be taken into account in combination with the WAL quantum correction. Otherwise, the WAL fitting alone yields an unrealistically large coefficient alpha in the HLN analysis. This work clarifies the WAL and LMR as two distinct effects and offers an explanation for the overly large alpha in the WAL analysis of topological insulators in some studies.
部门归属	[wang, zhenhua ; yang, liang ; zhao, xiaotian ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [gao, xuan p. a.] case western reserve univ, dept phys, cleveland, oh 44106 usa
关键词	Linear Magnetoresistance Weak Antilocalization Bi2te3 Films Topological Insulators
资助者	NSF [DMR-1151534]; IMR, Chinese Academy of Sciences; National Natural Science Foundation of China [51331006]
收录类别	sci
语种	英语
WOS记录号	WOS:000361057000018
引用统计	被引频次：49[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/74941
专题	中国科学院金属研究所
通讯作者	zhwang@imr.ac.cn; xuan.gao@case.edu
推荐引用方式 GB/T 7714	Wang, Zhenhua,Yang, Liang,Zhao, Xiaotian,et al. Linear magnetoresistance versus weak antilocalization effects in Bi2Te3[J]. NANO RESEARCH,2015,8(9):2963-2969.
APA	Wang, Zhenhua.,Yang, Liang.,Zhao, Xiaotian.,Zhang, Zhidong.,Gao, Xuan P. A..,...&xuan.gao@case.edu.(2015).Linear magnetoresistance versus weak antilocalization effects in Bi2Te3.NANO RESEARCH,8(9),2963-2969.
MLA	Wang, Zhenhua,et al."Linear magnetoresistance versus weak antilocalization effects in Bi2Te3".NANO RESEARCH 8.9(2015):2963-2969.