Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration

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	Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration
	Sawada, Yutaka; Seki, Shigeyuki; Uchida, Takayuki; Hoshi, Yoichi; Wang, Mei-Han; Lei, Hao; Sun, Li-Xian; sawada@chem.t-kougei.ac.jp; nariyuki@sendai-nct.ac.jp; uchida@mega.t-kougei.ac.jp; hoshi@em.t-kougei.ac.jp; wangmhdicp@aliyun.com; haolei@imr.ac.cn; sunlx@guet.edu.cn
	2015
发表期刊	PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015)
ISSN	2352-541X
卷号	3 页码:719-722
摘要	Indium-Tin-Oxide (ITO, tin-doped In2O3) films with low resistivity (7.7x10(-5) ohm cm) and high carrier electron concentration (1.8x10(21) cm-3) was successfully prepared by spray chemical vapor deposision in air and post-deposition annealing in reducing atmosphere in our previous papers; Y. Sawada et al., Thin Solid Films, 409 (2002) 46-50 and Y. Sawada, Materials Sci. Forum, 437-438 (2003) 23-26. Doping one tin ion generated two carrier electrons at low concentration of tin. The relation between carrier electron concentration and tin concentration are discussed in the present paper to propose a nobel defect model.
部门归属	[sawada, yutaka ; uchida, takayuki ; hoshi, yoichi] tokyo polytech univ, ctr hyper media res, atsugi, kanagawa, japan ; [seki, shigeyuki] sendai natl coll technol, dept elect engn, sendai, miyagi, japan ; [wang, mei-han] shenyang univ, scool mech engn, shenyang, peoples r china ; [lei, hao] chinese acad sci, inst met res, suraface engn mat div, shenyang 110016, peoples r china ; [sun, li-xian] guilin univ elect technol, sch mat sci & engn, guilin, peoples r china ; [sun, li-xian] guilin univ elect technol, guangxi key lab informat mat, guilin, peoples r china
关键词	Ito Tin-doped In2o3 Spray Chemical Vapor Deposition
收录类别	sci
语种	英语
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/74947
专题	中国科学院金属研究所
通讯作者	sawada@chem.t-kougei.ac.jp; nariyuki@sendai-nct.ac.jp; uchida@mega.t-kougei.ac.jp; hoshi@em.t-kougei.ac.jp; wangmhdicp@aliyun.com; haolei@imr.ac.cn; sunlx@guet.edu.cn
推荐引用方式 GB/T 7714	Sawada, Yutaka,Seki, Shigeyuki,Uchida, Takayuki,et al. Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration[J]. PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015),2015,3:719-722.
APA	Sawada, Yutaka.,Seki, Shigeyuki.,Uchida, Takayuki.,Hoshi, Yoichi.,Wang, Mei-Han.,...&sunlx@guet.edu.cn.(2015).Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration.PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015),3,719-722.
MLA	Sawada, Yutaka,et al."Low-Resistivity Indium-Tin-Oxide Transparent Conducting Films: Dependence of Carrier Electron Concentration on Tin Concentration".PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND APPLICATIONS (ICMSA 2015) 3(2015):719-722.