|Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface|
|Yin, Y. W.; Raju, M.; Hu, W. J.; Burton, J. D.; Kim, Y. -M.; Borisevich, A. Y.; Pennycook, S. J.; Yang, S. M.; Noh, T. W.; Gruverman, A.; Li, X. G.; Zhang, Z. D.; Tsymbal, E. Y.; Li, Qi; Qil1@psu.edu
|Source Publication||JOURNAL OF APPLIED PHYSICS
|Abstract||As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface. (c) 2015 AIP Publishing LLC.|
|description.department||[yin, y. w.
; raju, m.
; li, qi] penn state univ, dept phys, university pk, pa 16802 usa
; [hu, w. j.] king abdullah univ sci & technol, phys sci & engn div, thuwal 239556900, saudi arabia
; [burton, j. d.
; gruverman, a.
; tsymbal, e. y.] univ nebraska, dept phys & astron, lincoln, ne 68588 usa
; [burton, j. d.
; gruverman, a.
; tsymbal, e. y.] univ nebraska, nebraska ctr mat & nanosci, lincoln, ne 68588 usa
; [kim, y. -m.
; borisevich, a. y.
; pennycook, s. j.] oak ridge natl lab, mat sci & technol div, oak ridge, tn 37831 usa
; [yang, s. m.
; noh, t. w.] seoul natl univ, dept phys & astron, ibs ctr funct interfaces correlated electron syst, seoul 151747, south korea
; [li, x. g.] univ sci & technol china, hefei natl lab phys sci microscale, dept phys, hefei 230026, peoples r china
; [zhang, z. d.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china
|Funding Organization||DOE [DE-FG02-08ER4653]; NSF [DMR-1207474, DMR-1411166]; NSFC; NBRPC [2015CB921201]; FRFCU [WK2030020026]; NSF MRSEC [DMR-DMR-0820521]; Materials Science and Engineering Division of the U.S. DOE
Yin, Y. W.,Raju, M.,Hu, W. J.,et al. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface[J]. JOURNAL OF APPLIED PHYSICS,2015,117(17):-.
Yin, Y. W..,Raju, M..,Hu, W. J..,Burton, J. D..,Kim, Y. -M..,...&Qil1@psu.edu.(2015).Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface.JOURNAL OF APPLIED PHYSICS,117(17),-.
Yin, Y. W.,et al."Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface".JOURNAL OF APPLIED PHYSICS 117.17(2015):-.
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