On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns

IMR OpenIR

	On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns
	Tang, Y. L.; Zhu, Y. L.; Man, X. L.; xlma@imr.ac.cn
	2016
发表期刊	ULTRAMICROSCOPY
ISSN	0304-3991
卷号	160 页码:57-63
摘要	Revealing strains on the unit-cell level is essential for understanding the particular performance of materials. Large-scale strain variations with a unit-cell resolution are important for studying ferroelectric materials since the spontaneous polarizations of such materials are strongly coupled with strains. Aberration-corrected high-angle-annular-dark-field scanning transmission electron microscopy (AC-HAADF-STEM) is not so sensitive to the sample thickness and therefore thickness gradients. Consequently it is extremely useful for large-scale strain determination, which can be readily extracted by geometrical phase analysis (GPA). Such a combination has various advantages: it is straightforward, accurate on the unit-cell scale, relatively insensitive to crystal orientation and therefore helpful for large-scale. We take a tetragonal ferroelectric PbTiO3 film as an example in which large-scale strains are determined. Furthermore, based on the specific relationship between lattice rotation and spontaneous polarization (P-s) at 180 degrees domain-walls, the Ps directions are identified, which makes the investigation of ferroelectric domain structures accurate and straightforward. This method is proposed to be suitable for investigating strain-related phenomena in other ferroelectric materials. (C) 2015 Elsevier BY. All rights reserved.
部门归属	[tang, y. l. ; zhu, y. l. ; man, x. l.] chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china
关键词	Aberration-corrected Scanning Transmission Electron Microscopy High Angle Annular Dark Field (Haadf) Strain Determination Geometrical Phase Analysis (Gpa) Ferroelectric Domain Structure Pbtio3 Films
资助者	National Natural Science Foundation of China [51231007, 51171190]; National Basic Research Program of China [2014CB921002]
收录类别	sci
语种	英语
WOS记录号	WOS:000366220300007
引用统计	被引频次：57[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/75031
专题	中国科学院金属研究所
通讯作者	xlma@imr.ac.cn
推荐引用方式 GB/T 7714	Tang, Y. L.,Zhu, Y. L.,Man, X. L.,et al. On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns[J]. ULTRAMICROSCOPY,2016,160:57-63.
APA	Tang, Y. L.,Zhu, Y. L.,Man, X. L.,&xlma@imr.ac.cn.(2016).On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns.ULTRAMICROSCOPY,160,57-63.
MLA	Tang, Y. L.,et al."On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns".ULTRAMICROSCOPY 160(2016):57-63.