Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures

IMR OpenIR

	Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures
	Han, Yu; Wu, Zefei; Xu, Shuigang; Chen, Xiaolong; Wang, Lin; Wang, Yang; Xiong, Wei; Han, Tianyi; Ye, Weiguang; Lin, Jiangxiazi; Cai, Yuan; Ho, Kin Ming; He, Yuheng; Su, Dangsheng; Wang, Ning; phwang@ust.hk
	2015
发表期刊	ADVANCED MATERIALS INTERFACES
ISSN	2196-7350
卷号	2 期号:8 页码:-
摘要	Crystalline defects in MoS2 may induce midgap states, resulting in low carrier mobility. These midgap states are usually difficult to probe by conventional transport measurement. The quantum capacitance of single-layer graphene is sensitive to defect-induced states near the Dirac point, at which the density of states is extremely low. It is reported that the hexagonal-boron nitride/graphene/MoS2 sandwich structure facilitates the exploration of the properties of those midgap states in MoS2. Comparative results of the quantum capacitance of pristine graphene indicate the presence of several midgap states with distinct features. Some of these states donate electrons while some states lead to localization of electrons. It is believed that these midgap states originate from intrinsic point defects such as sulfur vacancies, which have a significant impact on the property of the MoS2/graphene interface. They are responsible for the contact problems of metal/MoS2 interfaces.
部门归属	[han, yu ; wu, zefei ; xu, shuigang ; chen, xiaolong ; wang, lin ; wang, yang ; xiong, wei ; han, tianyi ; ye, weiguang ; lin, jiangxiazi ; cai, yuan ; ho, kin ming ; he, yuheng ; wang, ning] hong kong univ sci technol, william mong inst nano sci technol, dept phys, hong kong, hong kong, peoples r china ; [su, dangsheng] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china
关键词	Defects Graphene Heterostructure Midgap States Mos2 Quantum Capacitance
资助者	Research Grants Council of Hong Kong [N_HKUST613/12, 604112, HKU9/CRF/13G, HKUST9/CRF/08]; Research Grants Council of Hong Kong (HKUST-SRFI); Raith-HKUST Nanotechnology Laboratory [SEG_HKUST08]
收录类别	sci
语种	英语
WOS记录号	WOS:000355234600006
引用统计	被引频次：15[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/75079
专题	中国科学院金属研究所
通讯作者	phwang@ust.hk
推荐引用方式 GB/T 7714	Han, Yu,Wu, Zefei,Xu, Shuigang,et al. Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures[J]. ADVANCED MATERIALS INTERFACES,2015,2(8):-.
APA	Han, Yu.,Wu, Zefei.,Xu, Shuigang.,Chen, Xiaolong.,Wang, Lin.,...&phwang@ust.hk.(2015).Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures.ADVANCED MATERIALS INTERFACES,2(8),-.
MLA	Han, Yu,et al."Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures".ADVANCED MATERIALS INTERFACES 2.8(2015):-.