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Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures
Han, Yu; Wu, Zefei; Xu, Shuigang; Chen, Xiaolong; Wang, Lin; Wang, Yang; Xiong, Wei; Han, Tianyi; Ye, Weiguang; Lin, Jiangxiazi; Cai, Yuan; Ho, Kin Ming; He, Yuheng; Su, Dangsheng; Wang, Ning; phwang@ust.hk
2015
Source PublicationADVANCED MATERIALS INTERFACES
ISSN2196-7350
Volume2Issue:8Pages:-
AbstractCrystalline defects in MoS2 may induce midgap states, resulting in low carrier mobility. These midgap states are usually difficult to probe by conventional transport measurement. The quantum capacitance of single-layer graphene is sensitive to defect-induced states near the Dirac point, at which the density of states is extremely low. It is reported that the hexagonal-boron nitride/graphene/MoS2 sandwich structure facilitates the exploration of the properties of those midgap states in MoS2. Comparative results of the quantum capacitance of pristine graphene indicate the presence of several midgap states with distinct features. Some of these states donate electrons while some states lead to localization of electrons. It is believed that these midgap states originate from intrinsic point defects such as sulfur vacancies, which have a significant impact on the property of the MoS2/graphene interface. They are responsible for the contact problems of metal/MoS2 interfaces.
description.department[han, yu ; wu, zefei ; xu, shuigang ; chen, xiaolong ; wang, lin ; wang, yang ; xiong, wei ; han, tianyi ; ye, weiguang ; lin, jiangxiazi ; cai, yuan ; ho, kin ming ; he, yuheng ; wang, ning] hong kong univ sci technol, william mong inst nano sci technol, dept phys, hong kong, hong kong, peoples r china ; [su, dangsheng] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, liaoning, peoples r china
KeywordDefects Graphene Heterostructure Midgap States Mos2 Quantum Capacitance
Funding OrganizationResearch Grants Council of Hong Kong [N_HKUST613/12, 604112, HKU9/CRF/13G, HKUST9/CRF/08]; Research Grants Council of Hong Kong (HKUST-SRFI); Raith-HKUST Nanotechnology Laboratory [SEG_HKUST08]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/75079
Collection中国科学院金属研究所
Corresponding Authorphwang@ust.hk
Recommended Citation
GB/T 7714
Han, Yu,Wu, Zefei,Xu, Shuigang,et al. Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures[J]. ADVANCED MATERIALS INTERFACES,2015,2(8):-.
APA Han, Yu.,Wu, Zefei.,Xu, Shuigang.,Chen, Xiaolong.,Wang, Lin.,...&phwang@ust.hk.(2015).Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures.ADVANCED MATERIALS INTERFACES,2(8),-.
MLA Han, Yu,et al."Probing Defect-Induced Midgap States in MoS2 Through Graphene-MoS2 Heterostructures".ADVANCED MATERIALS INTERFACES 2.8(2015):-.
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