Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe

IMR OpenIR

	Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe
	Yang, Wenjin; Liu, Baodan; Yang, Bing; Wang, Jianyu; Sekiguchi, Takashi; Thorsten, Staedler; Jiang, Xin; baodanliu@imr.ac.cn; xjiang@imr.ac.cn
	2015
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
卷号	25 期号:17 页码:2543-2551
摘要	Bandgap engineering of semiconductor nanostructures is of significant importance either for the optical property tailoring or for the integration of functional optoelectronic devices. Here, an efficient way to control the bandgap and emission wavelength is reported for a binary compound semiconductor through alloying with another binary compound. Taking GaP-ZnSe system as an example, the bandgap of quaternary GaP-ZnSe solid-solution nanowires can be selectively tailored in the range of 1.95-2.2 eV by controlling the solubility of ZnSe dopants in GaP host. High-resolution transmission electron microscopy measurement and chemical analyses using an X-ray energy dispersive spectrometer (EDS) demonstrate the solid-solution feature of GaP-ZnSe semiconductor alloy, while X-ray photoelectron spectroscopy (XPS) characterization verifies the formation of some new chemical bonds corresponding to Zn-P and Ga-S bonds in GaP-ZnSe nanowires. The strategy to tailor the optoelectronic property of semiconductor nanostructures through the solid-solution of two different binary compounds represents a general routine to the property modification of all pseudobinary systems and will open more opportunity for their applications in electronics, optics and optoelectronics.
部门归属	[yang, wenjin ; liu, baodan ; yang, bing ; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci synl, shenyang 110016, peoples r china ; [wang, jianyu ; sekiguchi, takashi] natl inst mat sci, nanoelect mat unit, tsukuba, ibaraki 3050044, japan ; [thorsten, staedler ; jiang, xin] univ siegen, inst mat engn, d-57076 siegen, germany ; [wang, jianyu] nanjing univ, natl lab microstruct, nanjing 210093, jiangsu, peoples r china ; [wang, jianyu] nanjing univ, sch elect sci & engn, nanjing 210093, jiangsu, peoples r china
资助者	Knowledge Innovation Program of Institute of Metal Research (IMR), Chinese Academy of Science (CAS) [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Chinese Scholarship Council [201400260067]; DAAD [57054770]
收录类别	sci
语种	英语
WOS记录号	WOS:000354200000007
引用统计	被引频次：32[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/75083
专题	中国科学院金属研究所
通讯作者	baodanliu@imr.ac.cn; xjiang@imr.ac.cn
推荐引用方式 GB/T 7714	Yang, Wenjin,Liu, Baodan,Yang, Bing,et al. Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe[J]. ADVANCED FUNCTIONAL MATERIALS,2015,25(17):2543-2551.
APA	Yang, Wenjin.,Liu, Baodan.,Yang, Bing.,Wang, Jianyu.,Sekiguchi, Takashi.,...&xjiang@imr.ac.cn.(2015).Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe.ADVANCED FUNCTIONAL MATERIALS,25(17),2543-2551.
MLA	Yang, Wenjin,et al."Pseudobinary Solid-Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP-ZnSe".ADVANCED FUNCTIONAL MATERIALS 25.17(2015):2543-2551.