SiC-assisted growth of tubular graphenic cones with carbon nanotube tips

IMR OpenIR

	SiC-assisted growth of tubular graphenic cones with carbon nanotube tips
	Zhuang, Hao; Yang, Bing; Zhang, Lei; Heuser, Steffen; Jiang, Xin; xin.jiang@uni-siegen.de
	2015
发表期刊	CARBON
ISSN	0008-6223
卷号	95 页码:824-832
摘要	SiC-assisted growth of tubular graphenic cones (TGCs) with carbon nanotube tip is achieved with high yield in the microwave plasma chemical vapor deposition process. No pre-existing metal or semiconductor catalyst particles are required on the substrate prior to the deposition process. Instead, the in situ grown SiC crystallites serve as the catalyst for the growth of TGCs. Thanks to the easy formation of SiC on various substrates, the process is compatible with a wide range of substrates, i.e. Si, diamond, 2H -SiC, GaN, and SiO2, but not only limited to them. In addition to developing the approach, the mechanism for the formation of TGCs is also proposed. When Si is used as the substrate, the 3C-SiC crystallites grow epitaxially on the surface, which further initiate the epitaxial growth of graphene with its basal plane parallel to the {111} planes of 3C-SiC. The further expansion of graphene is constrained by the 3C -SiC crystallites, leading to the formation of curved graphene layers, i.e. onion-like or bowl-shaped graphene-based carbon. These curved graphene layers are believed to be the possible nucleation sites for the growth of TGCs. Inclusion of boron in the gas phase promotes the growth rates and the final yields of TGCs. (C) 2015 Elsevier Ltd. All rights reserved.
部门归属	[zhuang, hao ; zhang, lei ; heuser, steffen ; jiang, xin] univ siegen, inst mat engn, d-57076 siegen, germany ; [yang, bing ; jiang, xin] chinese acad sci, imr, shenyang natl lab mat sci, shenyang 110016, peoples r china
关键词	Carbon Nanotubes Sic Graphene Metal-catalyst-free Microwave Plasma Chemical Vapor Deposition
资助者	National Nature Science Foundation of China [51402309]
收录类别	sci
语种	英语
WOS记录号	WOS:000363312900098
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/75115
专题	中国科学院金属研究所
通讯作者	xin.jiang@uni-siegen.de
推荐引用方式 GB/T 7714	Zhuang, Hao,Yang, Bing,Zhang, Lei,et al. SiC-assisted growth of tubular graphenic cones with carbon nanotube tips[J]. CARBON,2015,95:824-832.
APA	Zhuang, Hao,Yang, Bing,Zhang, Lei,Heuser, Steffen,Jiang, Xin,&xin.jiang@uni-siegen.de.(2015).SiC-assisted growth of tubular graphenic cones with carbon nanotube tips.CARBON,95,824-832.
MLA	Zhuang, Hao,et al."SiC-assisted growth of tubular graphenic cones with carbon nanotube tips".CARBON 95(2015):824-832.