|Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating|
|Li, Yang; Xu, Cheng-Yan; Qin, Jing-Kai; Feng, Wei; Wang, Jia-Ying; Zhang, Siqi; Ma, Lai-Peng; Cao, Jian; Hu, Ping An; Ren, Wencai; Zhen, Liang; firstname.lastname@example.org; email@example.com
|Source Publication||ADVANCED FUNCTIONAL MATERIALS
|Abstract||The behavior of excitons in van der Waals (vdWs) heterostructures depends on electron-electron interactions and charge transfer at the hetero-interface. However, what still remains to be unraveled is to which extent the carrier densities of both counterparts and the band alignment in the vdWs heterostructures determine the photoluminescence properties. Here, we systematically study the photoluminescence properties of monolayer MoS2/graphene heterostructures by modulating the carrier densities and contact barrier at the interface via electrochemical gating. It is shown that the PL intensities of excitons can be tuned by more than two orders of magnitude, and a blue-shift of the exciton peak of up to 40 meV is observed. By extracting the carrier density of MoS2 using an electric potential distribution model, and the Schottky barrier using first-principle calculations, we find that the controllable carrier density in MoS2 plays a dominant role in the PL tuning at negative gate bias, whereas the interlayer relaxation of excitons induced by the Schottky barrier has a major contribution at positive gate bias. This is further verified by controlling the tunneling barrier and screening field across MoS2 by inserting self-assembled monolayers (SAMs) at the interface. These findings will benefit to better understand the effect of many-body interactions and hetero-interfaces on the optical and optoelectronic properties in vdWs heterostructures.|
; xu, cheng-yan
; cao, jian] harbin inst technol, state key lab adv welding & joining, harbin 150001, peoples r china
; [li, yang
; xu, cheng-yan
; qin, jing-kai
; feng, wei
; wang, jia-ying
; zhen, liang] harbin inst technol, sch mat sci & engn, harbin 150001, peoples r china
; [hu, ping an
; zhen, liang] harbin inst technol, micro nano technol res ctr, harbin 150080, peoples r china
; [zhang, siqi] harbin inst technol, dept phys, harbin 150001, peoples r china
; [ma, lai-peng
; ren, wencai] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
|Funding Organization||National Natural Science Foundation of China ; State Key Laboratory of Advanced Welding and Joining [AWJ-M15-11]; National Basic Research Program of China [2012CB934102]; Ministry of Science and Technology of China [2012AA030303]; Fundamental Research Funds for the Central Universities [HIT.BRETIII.201203]; Lam Research Corp
|Corresponding Authorfirstname.lastname@example.org; email@example.com|
Li, Yang,Xu, Cheng-Yan,Qin, Jing-Kai,et al. Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating[J]. ADVANCED FUNCTIONAL MATERIALS,2016,26(2):293-302.
Li, Yang.,Xu, Cheng-Yan.,Qin, Jing-Kai.,Feng, Wei.,Wang, Jia-Ying.,...&firstname.lastname@example.org.(2016).Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating.ADVANCED FUNCTIONAL MATERIALS,26(2),293-302.
Li, Yang,et al."Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating".ADVANCED FUNCTIONAL MATERIALS 26.2(2016):293-302.
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