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Zn-dopant dependent defect evolution in GaN nanowires
Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Lju, Qingyun; Yuan, Fang; Jiang, Xin; xijiang@imr.ac.cn
2015
Source PublicationNANOSCALE
ISSN2040-3364
Volume7Issue:39Pages:16237-16245
AbstractZn doped GaN nanowires with different doping levels (0, < 1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (10<(1)over bar>3), (10 (1) over bar1) and (20 (2) over bar1), as well as Type I stacking faults (...ABAB (C) under bar BCB.), are observed in the nanowires. The increasing Zn doping level (< 1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABA<(C)under bar>BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.
description.department[yang, bing ; liu, baodan ; wang, yujia ; lju, qingyun ; yuan, fang ; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [zhuang, hao ; jiang, xin] univ siegen, inst mat engn, d-57076 siegen, germany
Funding OrganizationNational Nature Science Foundation of China [51402309]; Knowledge Innovation Program of Institute of Metal Research (IMR); Chinese Academy of Science (CAS) [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/75247
Collection中国科学院金属研究所
Corresponding Authorxijiang@imr.ac.cn
Recommended Citation
GB/T 7714
Yang, Bing,Liu, Baodan,Wang, Yujia,et al. Zn-dopant dependent defect evolution in GaN nanowires[J]. NANOSCALE,2015,7(39):16237-16245.
APA Yang, Bing.,Liu, Baodan.,Wang, Yujia.,Zhuang, Hao.,Lju, Qingyun.,...&xijiang@imr.ac.cn.(2015).Zn-dopant dependent defect evolution in GaN nanowires.NANOSCALE,7(39),16237-16245.
MLA Yang, Bing,et al."Zn-dopant dependent defect evolution in GaN nanowires".NANOSCALE 7.39(2015):16237-16245.
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