|Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers|
|Wang, Chun; Huang, Nan; Zhuang, Hao; Zhai, Zhaofeng; Yang, Bing; Liu, Lusheng; Jiang, Xin; Jiang, X (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China.
|Source Publication||SURFACE & COATINGS TECHNOLOGY
|Abstract||The controllable growth of heteroepitaxial cubic SiC (3C-SiC) films and two dimensional (2D) nanosheets arrays has been successfully achieved using a 915 MHz microwave plasma enhanced chemical vapor (MPCVD) deposited technique using tetramethylsilane (TMS) and hydrogen as the resource gases. A comprehensive analysis of the surface morphology of the 3C-SIC films was performed by tuning microwave power, TMS flow rate and gas pressure. With increasing microwave power, the morphology of the SiC crystals evolves from randomly oriented nanocrystals to well-oriented pyramid shaped crystals. The rocking curve results shows that the 3C-SiC film deposited at microwave power of 9 kW and gas pressure of 50 mbar remains epitaxial feature with increasing of TMS gas flow rate. As a result, uniform heteroepitaxial 3C-SiC film was deposited on 4-in. silicon wafer at low deposition temperature (similar to 860 degrees C). The structure of SiC film along the radial direction was measured by X-ray diffraction (XRD) results. X-ray photoelectron spectroscopy (XPS) spectra indicate the chemical information of SiC film surface and the depth profiles, which prove the uniform of elements distribution. Moreover, with increasing gas pressure, the film morphology transforms from the heteroepitaxial SiC film into 2D nanosheets, which is due to the increased ion current. (C) 2016 Elsevier B.V. All rights reserved.|
; huang, nan
; zhai, zhaofeng
; yang, bing
; liu, lusheng
; jiang, xin] chinese acad sci, inst met res, shenyang natl lab mat sci, wenhua rd 72, shenyang 110016, peoples r china
; [zhuang, hao
; jiang, xin] univ siegen, inst mat engn, paul bonatz str 9-11, d-57076 siegen, germany
|Subject Area||Materials Science
|Funding Organization||National Natural Science Foundation of China 
|Corresponding Author||Jiang, X (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China.|
Wang, Chun,Huang, Nan,Zhuang, Hao,et al. Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers[J]. SURFACE & COATINGS TECHNOLOGY,2016,299:96-103.
Wang, Chun.,Huang, Nan.,Zhuang, Hao.,Zhai, Zhaofeng.,Yang, Bing.,...&Jiang, X .(2016).Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers.SURFACE & COATINGS TECHNOLOGY,299,96-103.
Wang, Chun,et al."Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers".SURFACE & COATINGS TECHNOLOGY 299(2016):96-103.
|Files in This Item:||
||There are no files associated with this item.
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.