Manipulating dislocation nucleation and shear resistance of bimetal interfaces by atomic steps | |
Zhang, R. F.; Beyerlein, I. J.; Zheng, S. J.; Zhang, S. H.; Stukowski, A.; Germann, T. C.; Zhang, RF (reprint author), Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China.; Zhang, RF (reprint author), Beihang Univ, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China. | |
2016-07-01 | |
Source Publication | ACTA MATERIALIA
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ISSN | 1359-6454 |
Volume | 113Pages:194-205 |
Abstract | By means of atomistic simulations and interface dislocation theory, the mechanism of dislocation nucleation and shear resistance of various stepped fcc/bcc interfaces are comparatively studied using the Kurdjumov-Sachs (KS) Cu/Nb interface as a prototype. It is found that the introduction of atomic steps at the flat Cu{111}/{110}Nb KS interface does not change the most preferred slip systems, but influences the nucleation sites at the interface during tension loading, indicating that the flat and stepped interfaces possesses comparable energetic barriers for dislocation nucleation. During shear loading, the steps may significantly enhance the resistance to interface sliding by propagating partial dislocations that facilitate the emission and growth of parallel twins via cross slip. When the parallel twins are not favored or are hindered, the interface sliding will dominate in a "climbing peak-to-valley" manner. These results provide an effective pathway to solve the trade-off dilemma between dislocation nucleation and interface sliding by appropriately manipulating atomic steps at the flat interface in the design of high-strength metallic materials. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
description.department | [zhang, r. f. ; zhang, s. h.] beihang univ, sch mat sci & engn, beijing 100191, peoples r china ; [zhang, r. f. ; zhang, s. h.] beihang univ, int res inst multidisciplinary sci, beijing 100191, peoples r china ; [beyerlein, i. j. ; germann, t. c.] los alamos natl lab, div theoret, los alamos, nm 87545 usa ; [zheng, s. j.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [stukowski, a.] tech univ darmstadt, jovanka bontschits str 2, d-64287 darmstadt, germany |
Keyword | Md Simulations Interface Dislocation Plasticity Mechanical Strength |
Subject Area | Materials Science ; Metallurgy & Metallurgical Engineering |
Funding Organization | Fundamental Research Funds for the Central Universities; National Natural Science Foundation of China [51471018]; National Thousand Young Talents Program of China |
Indexed By | sci |
Language | 英语 |
WOS ID | WOS:000378670300020 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/75805 |
Collection | 中国科学院金属研究所 |
Corresponding Author | Zhang, RF (reprint author), Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China.; Zhang, RF (reprint author), Beihang Univ, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China. |
Recommended Citation GB/T 7714 | Zhang, R. F.,Beyerlein, I. J.,Zheng, S. J.,et al. Manipulating dislocation nucleation and shear resistance of bimetal interfaces by atomic steps[J]. ACTA MATERIALIA,2016,113:194-205. |
APA | Zhang, R. F..,Beyerlein, I. J..,Zheng, S. J..,Zhang, S. H..,Stukowski, A..,...&Zhang, RF .(2016).Manipulating dislocation nucleation and shear resistance of bimetal interfaces by atomic steps.ACTA MATERIALIA,113,194-205. |
MLA | Zhang, R. F.,et al."Manipulating dislocation nucleation and shear resistance of bimetal interfaces by atomic steps".ACTA MATERIALIA 113(2016):194-205. |
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