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| A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10 | |
| Yu, Jianding; Liu, Yan; Pan, Xiuhong; Zhao, Hongyang; Kumar, Velu Nirmal; Arivanandhan, Mukannan; Momose, Yoshimi; Hayakawa, Yasuhiro; Zhang, Xingwang; Luo, Xinghong; Okano, Yasuhiro; Inatomi, Yuko; Yu, JD (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China. | |
| 2016-05-01 | |
| Source Publication | MICROGRAVITY SCIENCE AND TECHNOLOGY
 |
| ISSN | 0938-0108 |
| Volume | 28Issue:2Pages:143-154 |
| Abstract | The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In Ga-x Sb1-x with higher indium composition at Chinese recovery satellite SJ-10 in near future. |
| description.department | [yu, jianding ; liu, yan ; pan, xiuhong ; zhao, hongyang] chinese acad sci, shanghai inst ceram, 1295 dingxi rd, shanghai 200050, peoples r china ; [kumar, velu nirmal ; arivanandhan, mukannan ; momose, yoshimi ; hayakawa, yasuhiro] shizuoka univ, elect res inst, 3-5-1 johoku, hamamatsu, shizuoka 4328011, japan ; [zhang, xingwang] chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china ; [luo, xinghong] chinese acad sci, inst met res, 72 wenhua rd, shenyang 110016, liaoning, peoples r china ; [okano, yasuhiro] osaka univ, grad sch engn sci, 1-3 machiganeyama, osaka 5608531, japan ; [inatomi, yuko] japan aerosp explorat agcy, inst space & astronaut sci, chuo ku, 3-1-1 yoshinodai, sagamihara, kanagawa 2525210, japan ; [inatomi, yuko] sokendai, sch phys sci, chuo ku, 3-1-1 yoshinodai, sagamihara, kanagawa 2525210, japan |
| Keyword | Microgravity Chinese Recovery Satellite Gravity Effect Alloy Semiconductor X-ray Penetration Method Temperature Freezing Method |
| Subject Area | Engineering ; Thermodynamics ; Mechanics |
| Funding Organization | Research Institute of Electronics, Shizuoka University |
| Indexed By | sci |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/75886 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Yu, JD (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China. |
| Recommended Citation GB/T 7714 | Yu, Jianding,Liu, Yan,Pan, Xiuhong,et al. A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10[J]. MICROGRAVITY SCIENCE AND TECHNOLOGY,2016,28(2):143-154. |
| APA | Yu, Jianding.,Liu, Yan.,Pan, Xiuhong.,Zhao, Hongyang.,Kumar, Velu Nirmal.,...&Yu, JD .(2016).A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10.MICROGRAVITY SCIENCE AND TECHNOLOGY,28(2),143-154. |
| MLA | Yu, Jianding,et al."A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10".MICROGRAVITY SCIENCE AND TECHNOLOGY 28.2(2016):143-154. |
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