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Electron optics with p-n junctions in ballistic graphene
Chen, SW; Han, Z; Elahi, MM; Habib, KMM; Wang, L; Wen, B; Gao, YD; Taniguchi, T; Watanabe, K; Hone, J; Ghosh, AW; Dean, CR; Dean, CR (reprint author), Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA.; Dean, CR (reprint author), Intel Corp, Santa Clara, CA 95054 USA.
2016-09-30
Source PublicationSCIENCE
ISSN0036-8075
Volume353Issue:6307Pages:1522-1525
AbstractElectrons transmitted across a ballistic semiconductor junction are expected to undergo refraction, analogous to light rays across an optical boundary. In graphene, the linear dispersion and zero-gap band structure admit highly transparent p-n junctions by simple electrostatic gating. Here, we employ transverse magnetic focusing to probe the propagation of carriers across an electrostatically defined graphene junction. We find agreement with the predicted Snell's law for electrons, including the observation of both positive and negative refraction. Resonant transmission across the p-n junction provides a direct measurement of the angle-dependent transmission coefficient. Comparing experimental data with simulations reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing electron optics based on graphene p-n junctions.
description.department[chen, shaowen ; han, zheng ; wen, bo ; dean, cory r.] columbia univ, dept phys, 538 w 120th st, new york, ny 10027 usa ; [chen, shaowen] columbia univ, dept appl phys & appl math, new york, ny 10027 usa ; [elahi, mirza m. ; habib, k. m. masum ; ghosh, avik w.] univ virginia, dept elect & comp engn, charlottesville, va 22904 usa ; [wang, lei] cornell univ, dept phys, ithaca, ny 14853 usa ; [gao, yuanda ; hone, james] columbia univ, dept mech engn, new york, ny 10027 usa ; [taniguchi, takashi ; watanabe, kenji] natl inst mat sci, 1-1 namiki, tsukuba, ibaraki 3050047, japan ; [han, zheng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [wen, bo] ibm corp, thomas j watson res ctr, 1101 kitchawan rd, yorktown hts, ny 10598 usa ; [habib, k. m. masum ; dean, cory r.] intel corp, santa clara, ca 95054 usa
Subject AreaMultidisciplinary Sciences
Funding OrganizationSemiconductor Research Corporation's NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX)
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/76271
Collection中国科学院金属研究所
Corresponding AuthorDean, CR (reprint author), Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA.; Dean, CR (reprint author), Intel Corp, Santa Clara, CA 95054 USA.
Recommended Citation
GB/T 7714
Chen, SW,Han, Z,Elahi, MM,et al. Electron optics with p-n junctions in ballistic graphene[J]. SCIENCE,2016,353(6307):1522-1525.
APA Chen, SW.,Han, Z.,Elahi, MM.,Habib, KMM.,Wang, L.,...&Dean, CR .(2016).Electron optics with p-n junctions in ballistic graphene.SCIENCE,353(6307),1522-1525.
MLA Chen, SW,et al."Electron optics with p-n junctions in ballistic graphene".SCIENCE 353.6307(2016):1522-1525.
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