| In-Plane Optical Anisotropy of Layered Gallium Telluride | |
| Huang, SX; Tatsumi, Y; Ling, X; Guo, HH; Wang, ZQ; Watson, G; Puretzky, AA; Geohegan, DB; Kong, J; Li, J; Yang, T; Saito, R; Dresselhaus, MS; Dresselhaus, MS (reprint author), MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA.; Dresselhaus, MS (reprint author), MIT, Dept Phys, Cambridge, MA 02139 USA. | |
| 2016-09-01 | |
| Source Publication | ACS NANO
 |
| ISSN | 1936-0851 |
| Volume | 10Issue:9Pages:8964-8972 |
| Abstract | Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C-2h(3) space group. Investigating the in-plane optical anisotropy, including the electron photon and electron phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. These studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy. |
| description.department | [huang, shengxi ; ling, xi ; kong, jing ; dresselhaus, mildred s.] mit, dept elect engn & comp sci, cambridge, ma 02139 usa ; [tatsumi, yuki ; yang, teng ; saito, riichiro] tohoku univ, dept phys, sendai, miyagi 9808578, japan ; [guo, huaihong] liaoning shihua univ, coll sci, fushun 113001, peoples r china ; [wang, ziqiang ; li, ju] mit, dept nucl sci & engn, 77 massachusetts ave, cambridge, ma 02139 usa ; [watson, garrett ; dresselhaus, mildred s.] mit, dept phys, cambridge, ma 02139 usa ; [puretzky, alexander a. ; geohegan, david b.] oak ridge natl lab, ctr nanophase mat sci, oak ridge, tn 37831 usa ; [yang, teng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china |
| Keyword | Light-matter Interaction Electron-photon Interaction Polarization-dependent Raman Spectroscopy Polarization-dependent Optical Extinction Group Theory Optical Transition Selection Rules |
| Subject Area | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| Indexed By | sci |
| Language | 英语 |
| WOS ID | WOS:000384399300095 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/76279 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Ling, X; Dresselhaus, MS (reprint author), MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA.; Dresselhaus, MS (reprint author), MIT, Dept Phys, Cambridge, MA 02139 USA. |
| Recommended Citation GB/T 7714 | Huang, SX,Tatsumi, Y,Ling, X,et al. In-Plane Optical Anisotropy of Layered Gallium Telluride[J]. ACS NANO,2016,10(9):8964-8972. |
| APA | Huang, SX.,Tatsumi, Y.,Ling, X.,Guo, HH.,Wang, ZQ.,...&Dresselhaus, MS .(2016).In-Plane Optical Anisotropy of Layered Gallium Telluride.ACS NANO,10(9),8964-8972. |
| MLA | Huang, SX,et al."In-Plane Optical Anisotropy of Layered Gallium Telluride".ACS NANO 10.9(2016):8964-8972. |
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