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In-Plane Optical Anisotropy of Layered Gallium Telluride
Huang, SX; Tatsumi, Y; Ling, X; Guo, HH; Wang, ZQ; Watson, G; Puretzky, AA; Geohegan, DB; Kong, J; Li, J; Yang, T; Saito, R; Dresselhaus, MS; Dresselhaus, MS (reprint author), MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA.; Dresselhaus, MS (reprint author), MIT, Dept Phys, Cambridge, MA 02139 USA.
2016-09-01
发表期刊ACS NANO
ISSN1936-0851
卷号10期号:9页码:8964-8972
摘要Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C-2h(3) space group. Investigating the in-plane optical anisotropy, including the electron photon and electron phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropy in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. These studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.
部门归属[huang, shengxi ; ling, xi ; kong, jing ; dresselhaus, mildred s.] mit, dept elect engn & comp sci, cambridge, ma 02139 usa ; [tatsumi, yuki ; yang, teng ; saito, riichiro] tohoku univ, dept phys, sendai, miyagi 9808578, japan ; [guo, huaihong] liaoning shihua univ, coll sci, fushun 113001, peoples r china ; [wang, ziqiang ; li, ju] mit, dept nucl sci & engn, 77 massachusetts ave, cambridge, ma 02139 usa ; [watson, garrett ; dresselhaus, mildred s.] mit, dept phys, cambridge, ma 02139 usa ; [puretzky, alexander a. ; geohegan, david b.] oak ridge natl lab, ctr nanophase mat sci, oak ridge, tn 37831 usa ; [yang, teng] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
关键词Light-matter Interaction Electron-photon Interaction Polarization-dependent Raman Spectroscopy Polarization-dependent Optical Extinction Group Theory Optical Transition Selection Rules
学科领域Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
收录类别sci
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/76279
专题中国科学院金属研究所
通讯作者Ling, X; Dresselhaus, MS (reprint author), MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA.; Dresselhaus, MS (reprint author), MIT, Dept Phys, Cambridge, MA 02139 USA.
推荐引用方式
GB/T 7714
Huang, SX,Tatsumi, Y,Ling, X,et al. In-Plane Optical Anisotropy of Layered Gallium Telluride[J]. ACS NANO,2016,10(9):8964-8972.
APA Huang, SX.,Tatsumi, Y.,Ling, X.,Guo, HH.,Wang, ZQ.,...&Dresselhaus, MS .(2016).In-Plane Optical Anisotropy of Layered Gallium Telluride.ACS NANO,10(9),8964-8972.
MLA Huang, SX,et al."In-Plane Optical Anisotropy of Layered Gallium Telluride".ACS NANO 10.9(2016):8964-8972.
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