Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots

IMR OpenIR

	Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots
	Zhang, Y; Chen, Y; Mietschke, M; Zhang, L; Yuan, FF; Abel, S; Huhne, R; Nielsch, K; Fompeyrine, J; Ding, F; Schmidt, OG; Ding, F (reprint author), IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germany.; Ding, F (reprint author), Leibniz Univ Hannover, Inst Solid State Phys, Appelstr 2, D-30167 Hannover, Germany.
	2016-09-01
发表期刊	NANO LETTERS
ISSN	1530-6984
卷号	16 期号:9 页码:5785-5791
摘要	Elastic strain fields-based on single crystal piezoelectric elements represent an effectivity way for engineering the quantum,dot (QD) emission with unrivaled precision and technological relevance: However, pioneering researches in this direction were mainly based, on bulk piezoelectric substrates, which prevent the development of clip-scale devices. Here, we present a monolithically integrated Microelectromechanical systems (MEMS) device with great potential for on-chip quantum photonic applications. High-quality epitatal PMN-PT thin fillip have been. grown on SrTiO3 buffered Si and show excellent piezoelectric responses: Dense arrays of MEMS with small footprints are then fabricated based On these films, forming an on-chip strain tuning platform. After transferring, the QD-containing nanomembranes onto these MEMS, the nonclassical emissions (e.g., single photons) from single QDs can be engineered by:the strain fields. We envision that the strain tunable QD sources on the individually addressable and monolithically integrated MEMS pave the way toward complex quantum photonic applications on chip.
部门归属	[zhang, yang ; chen, yan ; ding, fei ; schmidt, oliver g.] ifw dresden, inst integrat nanosci, helmholtzstr 20, d-01069 dresden, germany ; [mietschke, michael ; yuan, feifei ; huehne, ruben ; nielsch, kornelius] ifw dresden, inst metall mat, helmholtzstr 20, d-01069 dresden, germany ; [zhang, long] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [zhang, long] ifw dresden, inst complex mat, helmholtzstr 20, d-01069 dresden, germany ; [abel, stefan ; fompeyrine, jean] ibm res gmbh, saumerstr 4, ch-8803 ruschlikon, switzerland ; [schmidt, oliver g.] tech univ chemnitz, mat syst nanoelect, d-09111 chemnitz, germany ; [ding, fei] leibniz univ hannover, inst solid state phys, appelstr 2, d-30167 hannover, germany
关键词	Epitaxial Pmn-pt Films Quantum Dots Mems Single Photon Sources
学科领域	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
资助者	Alexander von Humboldt Foundation; European Union [601126 210]; German Research Foundation (DFG) [DI 2013/2-1]; German Federal Ministry of Education and Research (BMBF) [16KIS0106]; IFW Excellence Program; DFG in the framework of the priority program SPP 1599 [HU 1726/3]
收录类别	sci
语种	英语
WOS记录号	WOS:000383412100069
引用统计	被引频次：22[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/76286
专题	中国科学院金属研究所
通讯作者	Ding, F (reprint author), IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germany.; Ding, F (reprint author), Leibniz Univ Hannover, Inst Solid State Phys, Appelstr 2, D-30167 Hannover, Germany.
推荐引用方式 GB/T 7714	Zhang, Y,Chen, Y,Mietschke, M,et al. Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots[J]. NANO LETTERS,2016,16(9):5785-5791.
APA	Zhang, Y.,Chen, Y.,Mietschke, M.,Zhang, L.,Yuan, FF.,...&Ding, F .(2016).Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots.NANO LETTERS,16(9),5785-5791.
MLA	Zhang, Y,et al."Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots".NANO LETTERS 16.9(2016):5785-5791.