IMR OpenIR
The reliability of copper pillar under the coupling of thermal cycling and electric current stressing
Ma, HC; Guo, JD; Chen, JQ; Wu, D; Liu, ZQ; Zhu, QS; Zhang, L; Guo, HY; Guo, JD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China.
2016-09-01
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Volume27Issue:9Pages:9748-9754
AbstractCu pillar samples were subject to the thermal cycling test along with current stressing to investigate its reliability issues under the coupling effect. Analysis of scanning electron microscopy (SEM) pictures of Cu pillar bumps showed the evolution of interfacial microstructure. The finite element analysis pointed out the probable site of cracks initiation based on the strain and stress distribution. Three failure modes, electromigration (EM) induced cracks at Cu6Sn5/Sn interface on cathode, cracking of Cu/Cu3Sn interface on anode side, and fatigue-creep induced cracks in Sn solder, took place at the interfaces of copper pillar interconnect under electric current and thermal cycling. In addition, EM induced failure increased while fatigue-creep failure decreased with electric current density. The failure mechanisms were analyzed from stress concentration, interfacial morphology and voids formation respects.
description.department[ma, hui-cai ; guo, jing-dong ; chen, jian-qiang ; wu, di ; liu, zhi-quan ; zhu, qing-sheng] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china ; [zhang, li ; guo, hong-yan] jiangyin changdian adv packaging co ltd, jiangyin 214431, peoples r china
Subject AreaEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
Funding OrganizationNatural Science Foundation of China [51171191, 51471180]; Major National Science and Technology Program of China [2011ZX02602]
Indexed Bysci
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/76290
Collection中国科学院金属研究所
Corresponding AuthorGuo, JD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China.
Recommended Citation
GB/T 7714
Ma, HC,Guo, JD,Chen, JQ,et al. The reliability of copper pillar under the coupling of thermal cycling and electric current stressing[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(9):9748-9754.
APA Ma, HC.,Guo, JD.,Chen, JQ.,Wu, D.,Liu, ZQ.,...&Guo, JD .(2016).The reliability of copper pillar under the coupling of thermal cycling and electric current stressing.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,27(9),9748-9754.
MLA Ma, HC,et al."The reliability of copper pillar under the coupling of thermal cycling and electric current stressing".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 27.9(2016):9748-9754.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ma, HC]'s Articles
[Guo, JD]'s Articles
[Chen, JQ]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ma, HC]'s Articles
[Guo, JD]'s Articles
[Chen, JQ]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ma, HC]'s Articles
[Guo, JD]'s Articles
[Chen, JQ]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.