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The reliability of copper pillar under the coupling of thermal cycling and electric current stressing
Ma, HC; Guo, JD; Chen, JQ; Wu, D; Liu, ZQ; Zhu, QS; Zhang, L; Guo, HY; Guo, JD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China.
2016-09-01
发表期刊JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
卷号27期号:9页码:9748-9754
摘要Cu pillar samples were subject to the thermal cycling test along with current stressing to investigate its reliability issues under the coupling effect. Analysis of scanning electron microscopy (SEM) pictures of Cu pillar bumps showed the evolution of interfacial microstructure. The finite element analysis pointed out the probable site of cracks initiation based on the strain and stress distribution. Three failure modes, electromigration (EM) induced cracks at Cu6Sn5/Sn interface on cathode, cracking of Cu/Cu3Sn interface on anode side, and fatigue-creep induced cracks in Sn solder, took place at the interfaces of copper pillar interconnect under electric current and thermal cycling. In addition, EM induced failure increased while fatigue-creep failure decreased with electric current density. The failure mechanisms were analyzed from stress concentration, interfacial morphology and voids formation respects.
部门归属[ma, hui-cai ; guo, jing-dong ; chen, jian-qiang ; wu, di ; liu, zhi-quan ; zhu, qing-sheng] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china ; [zhang, li ; guo, hong-yan] jiangyin changdian adv packaging co ltd, jiangyin 214431, peoples r china
学科领域Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
资助者Natural Science Foundation of China [51171191, 51471180]; Major National Science and Technology Program of China [2011ZX02602]
收录类别sci
语种英语
WOS记录号WOS:000381159800120
引用统计
被引频次:15[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/76290
专题中国科学院金属研究所
通讯作者Guo, JD (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China.
推荐引用方式
GB/T 7714
Ma, HC,Guo, JD,Chen, JQ,et al. The reliability of copper pillar under the coupling of thermal cycling and electric current stressing[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(9):9748-9754.
APA Ma, HC.,Guo, JD.,Chen, JQ.,Wu, D.,Liu, ZQ.,...&Guo, JD .(2016).The reliability of copper pillar under the coupling of thermal cycling and electric current stressing.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,27(9),9748-9754.
MLA Ma, HC,et al."The reliability of copper pillar under the coupling of thermal cycling and electric current stressing".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 27.9(2016):9748-9754.
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