Quantitative Analysis of Temperature Dependence of Raman shift of monolayer WS2

IMR OpenIR

	Quantitative Analysis of Temperature Dependence of Raman shift of monolayer WS2
	Huang, XT; Gao, Y; Yang, TQ; Ren, WC; Cheng, HM; Lai, TS; Lai, TS (reprint author), Sun Yat Sen Univ, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China.; Ren, WC (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
	2016-08-31
发表期刊	SCIENTIFIC REPORTS
ISSN	2045-2322
卷号	6
摘要	We report the temperature-dependent evolution of Raman spectra of monolayer WS2 directly CVD-grown on a gold foil and then transferred onto quartz substrates over a wide temperature range from 84 to 543 K. The nonlinear temperature dependence of Raman shifts for both E-2g(1) and A(1g) modes has been observed. The first-order temperature coefficients of Raman shifts are obtained to be -0.0093 (cm(-1)/K) and -0.0122 (cm(-1)/K) for E-2g(1) and A(1g) peaks, respectively. A physical model, including thermal expansion and three-and four-phonon anharmonic effects, is used quantitatively to analyze the observed nonlinear temperature dependence. Thermal expansion coefficient (TEC) of monolayer WS2 is extracted from the experimental data for the first time. It is found that thermal expansion coefficient of out-plane mode is larger than one of in-plane mode, and TECs of E-2g(1) and A(1g) modes are temperature-dependent weakly and strongly, respectively. It is also found that the nonlinear temperature dependence of Raman shift of E-2g(1) mode mainly originates from the anharmonic effect of three-phonon process, whereas one of A(1g) mode is mainly contributed by thermal expansion effect in high temperature region, revealing that thermal expansion effect cannot be ignored.
部门归属	[huang, xiaoting ; yang, tianqi ; lai, tianshu] sun yat sen univ, sch phys, state key lab optoelect mat & technol, guangzhou 510275, guangdong, peoples r china ; [gao, yang ; ren, wencai ; cheng, hui-ming] chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china
学科领域	Multidisciplinary Sciences
资助者	National Basic Research Program of China [2013CB922403]; National Natural Science Foundation of China [11274399, 61475195, 51325205, 51290273]; Guangdong Natural Science Foundation, China [2014A030311029]
收录类别	sci
语种	英语
WOS记录号	WOS:000382237300001
引用统计	被引频次：89[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/76296
专题	中国科学院金属研究所
通讯作者	Lai, TS (reprint author), Sun Yat Sen Univ, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China.; Ren, WC (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Huang, XT,Gao, Y,Yang, TQ,et al. Quantitative Analysis of Temperature Dependence of Raman shift of monolayer WS2[J]. SCIENTIFIC REPORTS,2016,6.
APA	Huang, XT.,Gao, Y.,Yang, TQ.,Ren, WC.,Cheng, HM.,...&Ren, WC .(2016).Quantitative Analysis of Temperature Dependence of Raman shift of monolayer WS2.SCIENTIFIC REPORTS,6.
MLA	Huang, XT,et al."Quantitative Analysis of Temperature Dependence of Raman shift of monolayer WS2".SCIENTIFIC REPORTS 6(2016).