Tunable and enhanced luminescence of Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors for white light-emitting diodes | |
Zhang, XL; Liu, BD; Yang, WJ; Jiang, X; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, 72 Wenhua Rd, Shenyang 110016, Peoples R China. | |
2016-06-01 | |
发表期刊 | PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL
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ISSN | 1002-0071 |
卷号 | 26期号:3页码:312-318 |
摘要 | Color tuning and luminescence enhancement are predominant challenges for improving the performance of white light emitting diodes (LEDs) toward commercial application. In this paper, a novel promising Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors with tunable and enhanced luminescence for phosphors converted LEDs (pc-LEDs) have been successfully synthesized by a direct gas-reduction nitridation method. The effects of Ca and N doping on the phase purity, morphology and optical properties of Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors were also systematically investigated. The optical results show that Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors can be actively excited over a broad range from 250 to 430 nm. With the adding of different concentrations of Ca2+ ions in phosphors, the emission color wavelength can be tailored from 501 to 441 nm by a 375 nm NUV LED excitation source. Furthermore, it has been found that the emission and absorption of Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphor can be significantly improved when N3+ ions were introduced into the host lattices. The intensity of Ba1.5Ca0.5SiO4-yN2/3y: Eu2+ phosphor was 3.4 times higher than the phosphor without N doping. The fabrication and characterization of pc-LEDs using Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors-silica gel as the coating layer onto 375 nm-emitting InGaN LED caps demonstrated the superior optical and current tolerant properties, making it a promising and competitive candidate for commercial utilization in white LED applications. (C) 2016 Chinese Materials Research Society. Production and hosting by Elsevier B.V. |
部门归属 | [zhang, xinglai ; liu, baodan ; yang, wenjin ; jiang, xin] chinese acad sci, shenyang natl lab mat sci synl, imr, 72 wenhua rd, shenyang 110016, peoples r china |
关键词 | Phosphors Doping Luminescence Properties White Light Emitting Diodes |
学科领域 | Materials Science, Multidisciplinary ; Multidisciplinary Sciences |
资助者 | Knowledge Innovation Program of Institute of Metal Research [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171] |
收录类别 | sci |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/76332 |
专题 | 中国科学院金属研究所 |
通讯作者 | Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, 72 Wenhua Rd, Shenyang 110016, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang, XL,Liu, BD,Yang, WJ,et al. Tunable and enhanced luminescence of Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors for white light-emitting diodes[J]. PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL,2016,26(3):312-318. |
APA | Zhang, XL,Liu, BD,Yang, WJ,Jiang, X,&Jiang, X .(2016).Tunable and enhanced luminescence of Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors for white light-emitting diodes.PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL,26(3),312-318. |
MLA | Zhang, XL,et al."Tunable and enhanced luminescence of Ba2-xCaxSiO4-yN2/3y:Eu2+ phosphors for white light-emitting diodes".PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL 26.3(2016):312-318. |
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