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Long-term oxidation and electrical behavior of Nb-doped Ti3SiC2 as solid oxide fuel cell interconnects
Zheng, Li-Li; Li, Xi-Chao; Hua, Qing-Song; Dai, Zuo-Qiang; Zhang, Tie-Zhu; Qian, Yu-Hai; Xu, Jing-Jun; Li, Mei-Shuan; Zheng, LL (reprint author), Qingdao Univ, Power & Energy Storage Syst Res Ctr, Qingdao, Peoples R China.; Zheng, LL (reprint author), Qingdao Univ, Coll Mech & Elect Engn, Qingdao, Peoples R China.; Li, MS (reprint author), Chinese Acad Sci, High Performance Ceram Div, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang, Peoples R China.
2017-07-01
发表期刊JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN0002-7820
卷号100期号:7页码:3155-3164
摘要Nb-doped Ti3SiC2 compounds ((Ti1-xNbx)(3)SiC2, x=0%, 2%, 5%, 7%, and 10%) as novel interconnect materials of intermediate temperature solid oxide fuel cell (IT-SOFC) were studied in the simulated cathode atmosphere. The long-term oxidation behaviors and area-specific resistance (ASR) of these compounds have been investigated at 800 degrees C up to 700hours. Among these compounds, (Ti0.95Nb0.05)(3)SiC2 shows the best oxidation resistance and lowest postoxidation ASR (5.6mcm(2) after exposure at 800 degrees C in air for 700hours), endowing it a great promising material in the application as interconnect of IT-SOFC. After oxidation, Nb is mainly doped uniformly into the lattice of rutile-TiO2 (r-TiO2) grains formed on the tested compounds. Nb doping could decrease the concentrations of both oxygen vacancies and titanium interstitials in r-TiO2. As a result, the oxidation rate of (Ti,Nb)(3)SiC2 decreases remarkably, the structure of the oxide scale changes from a duplex layer of TiO2 outer layer and TiO2+SiO2 mixture inner layer to a single mixture layer. Nb doping also increases the amount of semifree electrons, causing the significant reduce of the postoxidation ASR of (Ti,Nb)(3)SiC2.; Nb-doped Ti3SiC2 compounds ((Ti1-xNbx)(3)SiC2, x=0%, 2%, 5%, 7%, and 10%) as novel interconnect materials of intermediate temperature solid oxide fuel cell (IT-SOFC) were studied in the simulated cathode atmosphere. The long-term oxidation behaviors and area-specific resistance (ASR) of these compounds have been investigated at 800 degrees C up to 700hours. Among these compounds, (Ti0.95Nb0.05)(3)SiC2 shows the best oxidation resistance and lowest postoxidation ASR (5.6mcm(2) after exposure at 800 degrees C in air for 700hours), endowing it a great promising material in the application as interconnect of IT-SOFC. After oxidation, Nb is mainly doped uniformly into the lattice of rutile-TiO2 (r-TiO2) grains formed on the tested compounds. Nb doping could decrease the concentrations of both oxygen vacancies and titanium interstitials in r-TiO2. As a result, the oxidation rate of (Ti,Nb)(3)SiC2 decreases remarkably, the structure of the oxide scale changes from a duplex layer of TiO2 outer layer and TiO2+SiO2 mixture inner layer to a single mixture layer. Nb doping also increases the amount of semifree electrons, causing the significant reduce of the postoxidation ASR of (Ti,Nb)(3)SiC2.
部门归属[zheng, li-li ; hua, qing-song ; dai, zuo-qiang ; zhang, tie-zhu] qingdao univ, power & energy storage syst res ctr, qingdao, peoples r china ; [zheng, li-li ; hua, qing-song ; dai, zuo-qiang ; zhang, tie-zhu] qingdao univ, coll mech & elect engn, qingdao, peoples r china ; [zheng, li-li ; li, xi-chao ; qian, yu-hai ; xu, jing-jun ; li, mei-shuan] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang, peoples r china ; [li, xi-chao] chinese acad sci, qingdao inst bioenergy & bioproc technol, qingdao, peoples r china
关键词Area-specific Resistance Interconnect Nb Doping Oxidation Ti3sic2
学科领域Materials Science, Ceramics
资助者National Science Foundation of China [51271191, 51571205]
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/78060
专题中国科学院金属研究所
通讯作者Zheng, LL (reprint author), Qingdao Univ, Power & Energy Storage Syst Res Ctr, Qingdao, Peoples R China.; Zheng, LL (reprint author), Qingdao Univ, Coll Mech & Elect Engn, Qingdao, Peoples R China.; Li, MS (reprint author), Chinese Acad Sci, High Performance Ceram Div, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang, Peoples R China.
推荐引用方式
GB/T 7714
Zheng, Li-Li,Li, Xi-Chao,Hua, Qing-Song,et al. Long-term oxidation and electrical behavior of Nb-doped Ti3SiC2 as solid oxide fuel cell interconnects[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY,2017,100(7):3155-3164.
APA Zheng, Li-Li.,Li, Xi-Chao.,Hua, Qing-Song.,Dai, Zuo-Qiang.,Zhang, Tie-Zhu.,...&Li, MS .(2017).Long-term oxidation and electrical behavior of Nb-doped Ti3SiC2 as solid oxide fuel cell interconnects.JOURNAL OF THE AMERICAN CERAMIC SOCIETY,100(7),3155-3164.
MLA Zheng, Li-Li,et al."Long-term oxidation and electrical behavior of Nb-doped Ti3SiC2 as solid oxide fuel cell interconnects".JOURNAL OF THE AMERICAN CERAMIC SOCIETY 100.7(2017):3155-3164.
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