Thickness-dependent a(1)/a(2) domain evolution in ferroelectric PbTiO3 films

IMR OpenIR

	Thickness-dependent a(1)/a(2) domain evolution in ferroelectric PbTiO3 films
	Li, S.; Zhu, Y. L.; Tang, Y. L.; Liu, Y.; Zhang, S. R.; Wang, Y. J.; Ma, X. L.; Zhu, YL (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Peoples R China.
	2017-06-01
发表期刊	ACTA MATERIALIA
ISSN	1359-6454
卷号	131 页码:123-130
摘要	Ferroelectric a(1)/a(2) domain structure has great potentials in high dielectric capacitors and tunable microwave devices. Understanding its structure is crucial to better control the domain configurations for future applications. In this paper, PbTiO3 thin films with variant thicknesses are deposited on (110) oriented GdScO3 substrates by Pulsed Laser Deposition (PLD) and investigated by using conventional transmission electron microscopy (TEM) and Cs-corrected Scanning TEM. Contrast analysis and electron diffractions reveal that PbTiO3 films are domain oriented consisting of a(1)/a(2) and a/c domain structure. The a(1)/a(2) domains are found to distribute periodically and its width increases with increasing film thickness following square root rule. Cs-corrected STEM imaging demonstrates that the domain walls of a(1)/a(2) domain structure have the rotation characteristic of 90 ferroelastic domain wall. The interchange of a(1)/a(2) domains induces the formation of vertex domains composed of two 90 and one 180 domain walls. Strains are mainly concentrated on the domain walls. The formation of this complex domain configuration is discussed in terms of the effect of the misfit strain, film thickness and cooling rate. These results provide novel information about a(1)/a(2) domain structures and are expected to shed some light on modulating a(1)/a(2) ferroelectric domain patterns in the design of ferroelectric-based devices. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.; Ferroelectric a(1)/a(2) domain structure has great potentials in high dielectric capacitors and tunable microwave devices. Understanding its structure is crucial to better control the domain configurations for future applications. In this paper, PbTiO3 thin films with variant thicknesses are deposited on (110) oriented GdScO3 substrates by Pulsed Laser Deposition (PLD) and investigated by using conventional transmission electron microscopy (TEM) and Cs-corrected Scanning TEM. Contrast analysis and electron diffractions reveal that PbTiO3 films are domain oriented consisting of a(1)/a(2) and a/c domain structure. The a(1)/a(2) domains are found to distribute periodically and its width increases with increasing film thickness following square root rule. Cs-corrected STEM imaging demonstrates that the domain walls of a(1)/a(2) domain structure have the rotation characteristic of 90 ferroelastic domain wall. The interchange of a(1)/a(2) domains induces the formation of vertex domains composed of two 90 and one 180 domain walls. Strains are mainly concentrated on the domain walls. The formation of this complex domain configuration is discussed in terms of the effect of the misfit strain, film thickness and cooling rate. These results provide novel information about a(1)/a(2) domain structures and are expected to shed some light on modulating a(1)/a(2) ferroelectric domain patterns in the design of ferroelectric-based devices. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属	[li, s. ; zhu, y. l. ; tang, y. l. ; liu, y. ; zhang, s. r. ; wang, y. j. ; ma, x. l.] chinese acad sci, shenyang natl lab mat sci, inst met res, wenhua rd 72, shenyang 110016, peoples r china ; [li, s. ; zhang, s. r.] univ chinese acad sci, yuquan rd 19, beijing 100039, peoples r china ; [ma, x. l.] lanzhou univ technol, sch mat sci & engn, langongping rd 287, lanzhou 730050, peoples r china
关键词	Ferroelectric Pbtio3 a(1)/a(2) Domain Structure Transmission Electron Microscopy
学科领域	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
资助者	National Natural Science Foundation of China [51571197, 51231007, 51501194, 51671194]; National Basic Research Program of China [2014CB921002]; Key Research Program of Frontier Sciences CAS [QYZDJ-SSW-JSC010]; IMR SYNL-T.S. Ke Research Fellowship
收录类别	SCI
语种	英语
WOS记录号	WOS:000402343400013
引用统计	被引频次：34[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78110
专题	中国科学院金属研究所
通讯作者	Zhu, YL (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Li, S.,Zhu, Y. L.,Tang, Y. L.,et al. Thickness-dependent a(1)/a(2) domain evolution in ferroelectric PbTiO3 films[J]. ACTA MATERIALIA,2017,131:123-130.
APA	Li, S..,Zhu, Y. L..,Tang, Y. L..,Liu, Y..,Zhang, S. R..,...&Zhu, YL .(2017).Thickness-dependent a(1)/a(2) domain evolution in ferroelectric PbTiO3 films.ACTA MATERIALIA,131,123-130.
MLA	Li, S.,et al."Thickness-dependent a(1)/a(2) domain evolution in ferroelectric PbTiO3 films".ACTA MATERIALIA 131(2017):123-130.