Advanced   Register
IMR OpenIR  > 中国科学院金属研究所  > 期刊论文

题名: Nonlinear voltage-current characteristics of MnTe films with island growth
作者: Yang, Liang;  Wang, Zhenhua;  Li, Da;  Zhang, Zhidong
发表日期: 2017-6-1
摘要: The structure and transport properties of Mn0.98Cr0.02Te and MnTe films prepared by pulsed laser deposition were investigated. The metal-semiconductor transition was observed below the Neel temperature of MnTe. A diode-like behavior near the transition temperature was shown in the voltage-current characteristics for these films grown with incompletely connected islands. The rough surface was proven to be necessary for the nonlinear voltage-current behavior. The Schottky barrier between the Ag electrode and the rough surface of the film contributed to the nonlinear voltage-current characteristic. The inhomogeneity of Cr along the direction of currents could not induce the diode-like behavior. The nonlinear current-voltage relationship resulted in the shift of metal-semiconductor transition temperature. (C) 2017 Published by Elsevier Ltd.
刊名: VACUUM
Appears in Collections:中国科学院金属研究所_期刊论文

Files in This Item:

There are no files associated with this item.




Recommended Citation:
Yang, Liang,Wang, Zhenhua,Li, Da,et al. Nonlinear Voltage-current Characteristics Of Mnte Films With Island Growth[J]. Vacuum,2017,140:165-171.

SCI Citaion Data:
Service
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [Yang, Liang]'s Articles
 [Wang, Zhenhua]'s Articles
 [Li, Da]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [Yang, Liang]‘s Articles
 [Wang, Zhenhua]‘s Articles
 [Li, Da]‘s Articles
Scirus search
 Similar articles in Scirus
Related Copyright Policies
Null
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Copyright © 2007-2018  中国科学院金属研究所  -Feedback
Powered by CSpace