| Nonlinear voltage-current characteristics of MnTe films with island growth | |
| Yang, Liang; Wang, Zhenhua; Li, Da; Zhang, Zhidong; Wang, ZH (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang, Peoples R China. | |
| 2017-06-01 | |
| Source Publication | VACUUM
 |
| ISSN | 0042-207X |
| Volume | 140Pages:165-171 |
| Abstract | The structure and transport properties of Mn0.98Cr0.02Te and MnTe films prepared by pulsed laser deposition were investigated. The metal-semiconductor transition was observed below the Neel temperature of MnTe. A diode-like behavior near the transition temperature was shown in the voltage-current characteristics for these films grown with incompletely connected islands. The rough surface was proven to be necessary for the nonlinear voltage-current behavior. The Schottky barrier between the Ag electrode and the rough surface of the film contributed to the nonlinear voltage-current characteristic. The inhomogeneity of Cr along the direction of currents could not induce the diode-like behavior. The nonlinear current-voltage relationship resulted in the shift of metal-semiconductor transition temperature. (C) 2017 Published by Elsevier Ltd.; The structure and transport properties of Mn0.98Cr0.02Te and MnTe films prepared by pulsed laser deposition were investigated. The metal-semiconductor transition was observed below the Neel temperature of MnTe. A diode-like behavior near the transition temperature was shown in the voltage-current characteristics for these films grown with incompletely connected islands. The rough surface was proven to be necessary for the nonlinear voltage-current behavior. The Schottky barrier between the Ag electrode and the rough surface of the film contributed to the nonlinear voltage-current characteristic. The inhomogeneity of Cr along the direction of currents could not induce the diode-like behavior. The nonlinear current-voltage relationship resulted in the shift of metal-semiconductor transition temperature. (C) 2017 Published by Elsevier Ltd. |
| description.department | [yang, liang ; wang, zhenhua ; li, da ; zhang, zhidong] chinese acad sci, inst met res, shenyang, peoples r china |
| Keyword | Nonlinear Current-voltage Characteristic Diode-like Behavior Island Growth Mnte Film |
| Subject Area | Materials Science, Multidisciplinary ; Physics, Applied |
| Funding Organization | National Natural Science Foundation of China [51522104, 51331006] |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000401382300032 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/78117 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Wang, ZH (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang, Peoples R China. |
| Recommended Citation GB/T 7714 | Yang, Liang,Wang, Zhenhua,Li, Da,et al. Nonlinear voltage-current characteristics of MnTe films with island growth[J]. VACUUM,2017,140:165-171. |
| APA | Yang, Liang,Wang, Zhenhua,Li, Da,Zhang, Zhidong,&Wang, ZH .(2017).Nonlinear voltage-current characteristics of MnTe films with island growth.VACUUM,140,165-171. |
| MLA | Yang, Liang,et al."Nonlinear voltage-current characteristics of MnTe films with island growth".VACUUM 140(2017):165-171. |
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