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Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates
Wang, Zhenhua; Li, Mingze; Yang, Liang; Zhang, Zhidong; Gao, Xuan P. A.; Zhang, ZD (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Zhang, ZD (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China.; Gao, XPA (reprint author), Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA.
2017-06-01
发表期刊NANO RESEARCH
ISSN1998-0124
卷号10期号:6页码:1872-1879
摘要We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD). The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths. Under the light illumination with a wavelength of 1,000 nm, a short circuit current (I-SC) of 19.2 mu A and an open circuit voltage (V-OC) of 235 mV are achieved. The maximum fill factor (FF) increases with a decrease in the wavelength or light density, achieving a value of 35.6% under 600 nm illumination. The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale. These findings are important for both the fundamental understanding and solar cell device applications of TI materials.; We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD). The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths. Under the light illumination with a wavelength of 1,000 nm, a short circuit current (I-SC) of 19.2 mu A and an open circuit voltage (V-OC) of 235 mV are achieved. The maximum fill factor (FF) increases with a decrease in the wavelength or light density, achieving a value of 35.6% under 600 nm illumination. The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale. These findings are important for both the fundamental understanding and solar cell device applications of TI materials.
部门归属[wang, zhenhua ; li, mingze ; yang, liang ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [wang, zhenhua ; li, mingze ; yang, liang ; zhang, zhidong] univ sci & technol china, sch mat sci & engn, 96 jinzhai rd, hefei 230026, peoples r china ; [gao, xuan p. a.] case western reserve univ, dept phys, cleveland, oh 44106 usa
关键词Photovoltaic Effect Topological Insulators Bi2te3/si Film
学科领域Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
资助者National Natural Science Foundation of China [51522104, 51590883, 51331006, KJZD-EW-M05-3]; NSF CAREER [DMR-1151534]
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/78121
专题中国科学院金属研究所
通讯作者Zhang, ZD (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Zhang, ZD (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China.; Gao, XPA (reprint author), Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA.
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GB/T 7714
Wang, Zhenhua,Li, Mingze,Yang, Liang,et al. Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates[J]. NANO RESEARCH,2017,10(6):1872-1879.
APA Wang, Zhenhua.,Li, Mingze.,Yang, Liang.,Zhang, Zhidong.,Gao, Xuan P. A..,...&Gao, XPA .(2017).Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates.NANO RESEARCH,10(6),1872-1879.
MLA Wang, Zhenhua,et al."Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates".NANO RESEARCH 10.6(2017):1872-1879.
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