IMR OpenIR
Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates
Wang, Zhenhua; Li, Mingze; Yang, Liang; Zhang, Zhidong; Gao, Xuan P. A.; Zhang, ZD (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Zhang, ZD (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China.; Gao, XPA (reprint author), Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA.
2017-06-01
Source PublicationNANO RESEARCH
ISSN1998-0124
Volume10Issue:6Pages:1872-1879
AbstractWe report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD). The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths. Under the light illumination with a wavelength of 1,000 nm, a short circuit current (I-SC) of 19.2 mu A and an open circuit voltage (V-OC) of 235 mV are achieved. The maximum fill factor (FF) increases with a decrease in the wavelength or light density, achieving a value of 35.6% under 600 nm illumination. The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale. These findings are important for both the fundamental understanding and solar cell device applications of TI materials.; We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD). The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths. Under the light illumination with a wavelength of 1,000 nm, a short circuit current (I-SC) of 19.2 mu A and an open circuit voltage (V-OC) of 235 mV are achieved. The maximum fill factor (FF) increases with a decrease in the wavelength or light density, achieving a value of 35.6% under 600 nm illumination. The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale. These findings are important for both the fundamental understanding and solar cell device applications of TI materials.
description.department[wang, zhenhua ; li, mingze ; yang, liang ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [wang, zhenhua ; li, mingze ; yang, liang ; zhang, zhidong] univ sci & technol china, sch mat sci & engn, 96 jinzhai rd, hefei 230026, peoples r china ; [gao, xuan p. a.] case western reserve univ, dept phys, cleveland, oh 44106 usa
KeywordPhotovoltaic Effect Topological Insulators Bi2te3/si Film
Subject AreaChemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationNational Natural Science Foundation of China [51522104, 51590883, 51331006, KJZD-EW-M05-3]; NSF CAREER [DMR-1151534]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78121
Collection中国科学院金属研究所
Corresponding AuthorZhang, ZD (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Zhang, ZD (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China.; Gao, XPA (reprint author), Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA.
Recommended Citation
GB/T 7714
Wang, Zhenhua,Li, Mingze,Yang, Liang,et al. Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates[J]. NANO RESEARCH,2017,10(6):1872-1879.
APA Wang, Zhenhua.,Li, Mingze.,Yang, Liang.,Zhang, Zhidong.,Gao, Xuan P. A..,...&Gao, XPA .(2017).Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates.NANO RESEARCH,10(6),1872-1879.
MLA Wang, Zhenhua,et al."Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates".NANO RESEARCH 10.6(2017):1872-1879.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wang, Zhenhua]'s Articles
[Li, Mingze]'s Articles
[Yang, Liang]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wang, Zhenhua]'s Articles
[Li, Mingze]'s Articles
[Yang, Liang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wang, Zhenhua]'s Articles
[Li, Mingze]'s Articles
[Yang, Liang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.