Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates

IMR OpenIR

	Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates
	Wang, Zhenhua; Li, Mingze; Yang, Liang; Zhang, Zhidong; Gao, Xuan P. A.; Zhang, ZD (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Zhang, ZD (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China.; Gao, XPA (reprint author), Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA.
	2017-06-01
发表期刊	NANO RESEARCH
ISSN	1998-0124
卷号	10 期号:6 页码:1872-1879
摘要	We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD). The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths. Under the light illumination with a wavelength of 1,000 nm, a short circuit current (I-SC) of 19.2 mu A and an open circuit voltage (V-OC) of 235 mV are achieved. The maximum fill factor (FF) increases with a decrease in the wavelength or light density, achieving a value of 35.6% under 600 nm illumination. The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale. These findings are important for both the fundamental understanding and solar cell device applications of TI materials.; We report the photovoltaic effects of n-type topological insulator (TI) Bi2Te3 films grown on p-type Si substrates by chemical vapor deposition (CVD). The films containing large nanoplates with a smooth surface formed on p-Si exhibit good p-n diode characteristics under dark and light illumination conditions and display a good photovoltaic effect under the broadband range from ultraviolet (UV) to near infrared (NIR) wavelengths. Under the light illumination with a wavelength of 1,000 nm, a short circuit current (I-SC) of 19.2 mu A and an open circuit voltage (V-OC) of 235 mV are achieved. The maximum fill factor (FF) increases with a decrease in the wavelength or light density, achieving a value of 35.6% under 600 nm illumination. The photoresponse of the n-Bi2Te3/p-Si device can be effectively switched between the on and off modes in millisecond time scale. These findings are important for both the fundamental understanding and solar cell device applications of TI materials.
部门归属	[wang, zhenhua ; li, mingze ; yang, liang ; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [wang, zhenhua ; li, mingze ; yang, liang ; zhang, zhidong] univ sci & technol china, sch mat sci & engn, 96 jinzhai rd, hefei 230026, peoples r china ; [gao, xuan p. a.] case western reserve univ, dept phys, cleveland, oh 44106 usa
关键词	Photovoltaic Effect Topological Insulators Bi2te3/si Film
学科领域	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
资助者	National Natural Science Foundation of China [51522104, 51590883, 51331006, KJZD-EW-M05-3]; NSF CAREER [DMR-1151534]
收录类别	SCI
语种	英语
WOS记录号	WOS:000401320700002
引用统计	被引频次：34[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78121
专题	中国科学院金属研究所
通讯作者	Zhang, ZD (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Zhang, ZD (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China.; Gao, XPA (reprint author), Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA.
推荐引用方式 GB/T 7714	Wang, Zhenhua,Li, Mingze,Yang, Liang,et al. Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates[J]. NANO RESEARCH,2017,10(6):1872-1879.
APA	Wang, Zhenhua.,Li, Mingze.,Yang, Liang.,Zhang, Zhidong.,Gao, Xuan P. A..,...&Gao, XPA .(2017).Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates.NANO RESEARCH,10(6),1872-1879.
MLA	Wang, Zhenhua,et al."Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type Si substrates".NANO RESEARCH 10.6(2017):1872-1879.