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Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling
Zhang, Xinglai; Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Li, Jing; Niu, Pingjuan; Jiang, Xin; Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
2017-05-07
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
Volume5Issue:17Pages:4319-4326
AbstractHigh performance ultraviolet (UV) photodetectors based on semiconducting nanowires are expected to have extensive applications in UV-ray detection, optical communication and environmental monitoring. In this work, GaN nanowire photodetectors have been fabricated and giant UV photoresponse has been achieved with Pt nanoparticle (NP) modification. The peak responsivity and external quantum efficiency (EQE) of the GaN nanowire UV photodetector were increased from 773 to 6.39 x 10(4) A W (1) and from 2.71 x 10(5)% to 2.24 x 10(7)%, respectively, and the response time and sensitivity were improved greatly after Pt NP decoration on the GaN nanowire surface. Moreover, the Pt-GaN nanowire photodetector still presents its spectrum selectivity in the UV region. Our results reveal that Pt nanoparticles play a key role in enhancing the photodetection performance of the nanodevice due to the strong absorption and scattering of incident light induced by localized surface plasmon resonance (LSPR) and the improvement of interfacial charge separation owing to the special device configuration. These findings offer an efficient avenue toward the performance enhancement of GaN nanowire and related optoelectronic devices or systems.; High performance ultraviolet (UV) photodetectors based on semiconducting nanowires are expected to have extensive applications in UV-ray detection, optical communication and environmental monitoring. In this work, GaN nanowire photodetectors have been fabricated and giant UV photoresponse has been achieved with Pt nanoparticle (NP) modification. The peak responsivity and external quantum efficiency (EQE) of the GaN nanowire UV photodetector were increased from 773 to 6.39 x 10(4) A W (1) and from 2.71 x 10(5)% to 2.24 x 10(7)%, respectively, and the response time and sensitivity were improved greatly after Pt NP decoration on the GaN nanowire surface. Moreover, the Pt-GaN nanowire photodetector still presents its spectrum selectivity in the UV region. Our results reveal that Pt nanoparticles play a key role in enhancing the photodetection performance of the nanodevice due to the strong absorption and scattering of incident light induced by localized surface plasmon resonance (LSPR) and the improvement of interfacial charge separation owing to the special device configuration. These findings offer an efficient avenue toward the performance enhancement of GaN nanowire and related optoelectronic devices or systems.
description.department[zhang, xinglai ; liu, qingyun ; liu, baodan ; yang, wenjin ; li, jing ; jiang, xin] chinese acad sci, shenyang natl lab mat sci synl, imr, 72 wenhua rd, shenyang 110016, peoples r china ; [liu, qingyun] univ chinese acad sci, 19 a yuquan rd, beijing 100049, peoples r china ; [niu, pingjuan] tianjin polytech univ, sch elect engn & automat, 399 binshuixi rd, tianjin 300387, peoples r china
Subject AreaMaterials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationKnowledge Innovation Program of Institute of Metal Research, Chinese Academy of Sciences [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; Basic Science Innovation Program of Shenyang National Laboratory for Materials Science [Y4NC6R1161]; National Torch Plan [2015GHA100042B00]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78141
Collection中国科学院金属研究所
Corresponding AuthorLiu, BD; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, IMR, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
Recommended Citation
GB/T 7714
Zhang, Xinglai,Liu, Qingyun,Liu, Baodan,et al. Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling[J]. JOURNAL OF MATERIALS CHEMISTRY C,2017,5(17):4319-4326.
APA Zhang, Xinglai.,Liu, Qingyun.,Liu, Baodan.,Yang, Wenjin.,Li, Jing.,...&Jiang, X .(2017).Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling.JOURNAL OF MATERIALS CHEMISTRY C,5(17),4319-4326.
MLA Zhang, Xinglai,et al."Giant UV photoresponse of a GaN nanowire photodetector through effective Pt nanoparticle coupling".JOURNAL OF MATERIALS CHEMISTRY C 5.17(2017):4319-4326.
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