Template Approach to Crystalline GaN Nanosheets

IMR OpenIR

	Template Approach to Crystalline GaN Nanosheets
	Liu, Baodan; Yang, Wenjin; Li, Jing; Zhang, Xinglai; Niu, Pingjuan; Jiang, Xin; Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci SYNL, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
	2017-05-01
发表期刊	NANO LETTERS
ISSN	1530-6984
卷号	17 期号:5 页码:3195-3201
摘要	Crystalline GaN nanosheets hold great challenge in growth and promising application in optoelectronic nanodevices. In this work, we reported an accessible template approach toward the rational synthesis of GaN nanosheets through the nitridation of metastable gamma-Ga2O3 nanosheets synthesized from a hydrothermal reaction. The cubic gamma-Ga2O3 nanosheets with smooth surface and decent crystallinity can be directly converted into hexagonal GaN nanosheets with similar morphology framework and comparable crystal quality in NH3 at 850 degrees C. UV-vis spectrum measurement reveals that the GaN nanosheets show a band gap of 3.30 eV with strong visible absorption in the range of 370-500 nm. The template synthetic strategy proposed in this work will open up more opportunities for the achievement of a variety of sheetlike nanostructures that can not be obtained through conventional routines and will undoubtedly further promote the fundamental research of newly emerging sheetlike nanostructures and nanotechnology.; Crystalline GaN nanosheets hold great challenge in growth and promising application in optoelectronic nanodevices. In this work, we reported an accessible template approach toward the rational synthesis of GaN nanosheets through the nitridation of metastable gamma-Ga2O3 nanosheets synthesized from a hydrothermal reaction. The cubic gamma-Ga2O3 nanosheets with smooth surface and decent crystallinity can be directly converted into hexagonal GaN nanosheets with similar morphology framework and comparable crystal quality in NH3 at 850 degrees C. UV-vis spectrum measurement reveals that the GaN nanosheets show a band gap of 3.30 eV with strong visible absorption in the range of 370-500 nm. The template synthetic strategy proposed in this work will open up more opportunities for the achievement of a variety of sheetlike nanostructures that can not be obtained through conventional routines and will undoubtedly further promote the fundamental research of newly emerging sheetlike nanostructures and nanotechnology.
部门归属	[liu, baodan ; yang, wenjin ; li, jing ; zhang, xinglai ; jiang, xin] chinese acad sci, imr, shenyang natl lab mat sci synl, 72 wenhua rd, shenyang 110016, peoples r china ; [yang, wenjin] univ sci & technol china, sch mat sci & engn, 72 wenhua rd, shenyang 110016, peoples r china ; [niu, pingjuan] tianjin polytech univ, sch elect engn & automat, 399 binshuixi rd, tianjin 300387, peoples r china
关键词	Gan Nanosheets Template Synthesis Hrtem Optical Property Gamma-ga2o3
学科领域	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
资助者	Knowledge Innovation Program of Institute of Metal Research, Chinese Academy of Sciences [Y2NCA111A1, Y3NCA111A1]; Basic Science Innovation Program of Shenyang National Laboratory for Materials Science [Y4NC6R1161]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]; National Torch Plan [2015GHA100042B00]
收录类别	SCI
语种	英语
WOS记录号	WOS:000401307300067
引用统计	被引频次：77[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78157
专题	中国科学院金属研究所
通讯作者	Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci SYNL, 72 Wenhua Rd, Shenyang 110016, Peoples R China.
推荐引用方式 GB/T 7714	Liu, Baodan,Yang, Wenjin,Li, Jing,et al. Template Approach to Crystalline GaN Nanosheets[J]. NANO LETTERS,2017,17(5):3195-3201.
APA	Liu, Baodan.,Yang, Wenjin.,Li, Jing.,Zhang, Xinglai.,Niu, Pingjuan.,...&Jiang, X .(2017).Template Approach to Crystalline GaN Nanosheets.NANO LETTERS,17(5),3195-3201.
MLA	Liu, Baodan,et al."Template Approach to Crystalline GaN Nanosheets".NANO LETTERS 17.5(2017):3195-3201.