| Effect of aging-induced disorder on the quantum transport properties of few-layer WTe2 | |
| Liu, Wei Lai; Chen, Mao Lin; Li, Xiao Xi; Dubey, Sudipta; Xiong, Ting; Dai, Zhi Ming; Yin, Jun; Guo, Wan Lin; Ma, Jin Long; Chen, Ya Ni; Tan, Jun; Li, Da; Wang, Zhen Hua; Li, Wu; Bouchiat, Vincent; Sun, Dong Ming; Han, Zheng; Zhang, Zhi Dong; Sun, DM; Han, Z (reprint author), Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Han, Z (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China. | |
| 2017-03-01 | |
| Source Publication | 2D MATERIALS
 |
| ISSN | 2053-1583 |
| Volume | 4Issue:1Pages:- |
| Abstract | The emerging physical phenomena found in transition metal dicalcogenides (TMDCs) have triggered vast investigations in recent years. Among them, nanoelectronics in WTe2 devices have attracted particular attentions due to its exotic band structure that leads to exciting phenomena such as the predicted type-II Weyl semimetallic state. However, the thickness dependence of its quantum transport properties in the two-dimensional limit remains under debate. The major missing ingredient in the previous studies is the aging-induced disorder, as atomically thin layers of TMDCs are often known to be metastable in the ambient atmosphere. Here, we show systematic performance of low temperature quantum electronic transport of few-layer WTe2. It is observed that aging-induced localized electronic states explains the low temperature Coulomb gap in transport measurements, leading to the anomalous magnetotransport which appears to be extrinsic. While few-layered WTe2 shows clear metallic tendency in the fresh state, degraded devices first exhibited a re-entrant insulating behavior, and finally entered a fully insulating state. Correspondingly, a crossover from parabolic to linear magnetoresistance, and, upon further aging, leads to the observation of weak anti-localization. Our study reveals for the first time the correlation between the unusual magnetotransport and disorder in few-layered WTe2, which is indispensable in providing guidance on its future device applications.; The emerging physical phenomena found in transition metal dicalcogenides (TMDCs) have triggered vast investigations in recent years. Among them, nanoelectronics in WTe2 devices have attracted particular attentions due to its exotic band structure that leads to exciting phenomena such as the predicted type-II Weyl semimetallic state. However, the thickness dependence of its quantum transport properties in the two-dimensional limit remains under debate. The major missing ingredient in the previous studies is the aging-induced disorder, as atomically thin layers of TMDCs are often known to be metastable in the ambient atmosphere. Here, we show systematic performance of low temperature quantum electronic transport of few-layer WTe2. It is observed that aging-induced localized electronic states explains the low temperature Coulomb gap in transport measurements, leading to the anomalous magnetotransport which appears to be extrinsic. While few-layered WTe2 shows clear metallic tendency in the fresh state, degraded devices first exhibited a re-entrant insulating behavior, and finally entered a fully insulating state. Correspondingly, a crossover from parabolic to linear magnetoresistance, and, upon further aging, leads to the observation of weak anti-localization. Our study reveals for the first time the correlation between the unusual magnetotransport and disorder in few-layered WTe2, which is indispensable in providing guidance on its future device applications. |
| description.department | [liu, wei lai ; chen, mao lin ; li, xiao xi ; xiong, ting ; dai, zhi ming ; tan, jun ; li, da ; wang, zhen hua ; sun, dong ming ; han, zheng ; zhang, zhi dong] chinese acad sci, imr, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china ; [liu, wei lai ; chen, mao lin ; li, xiao xi ; xiong, ting ; dai, zhi ming ; tan, jun ; li, da ; wang, zhen hua ; sun, dong ming ; han, zheng ; zhang, zhi dong] univ sci & technol china, sch mat sci & engn, hefei 230026, anhui, peoples r china ; [dubey, sudipta ; bouchiat, vincent] univ grenoble alpes, cnrs, inst neel, f-38000 grenoble, france ; [yin, jun ; guo, wan lin] nanjing univ aeronaut & astronaut, state key lab mech & control mech struct, key lab intelligent nano mat & devices, minist educ, nanjing 210016, jiangsu, peoples r china ; [yin, jun ; guo, wan lin] nanjing univ aeronaut & astronaut, inst nanosci, nanjing 210016, jiangsu, peoples r china ; [ma, jin long ; chen, ya ni ; li, wu] shenzhen univ, inst adv study, nanhai ave 3688, shenzhen 518060, peoples r china |
| Keyword | Wte2 Quantum Transport Disorder |
| Subject Area | Materials Science, Multidisciplinary |
| Funding Organization | National Natural Science Foundation of China [51522104, 11504385, 51272256, 61422406, 61574143, 51371175, 51331006]; Chinese Academy of Science [KJZD-EW-M05-3]; EU [604391]; 2DTRANSFORMERS project under OH RISQUE program of Agence Nationale de la Recherche (ANR) [ANR-14-OHRI-0004] |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000391301000001 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/78275 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Sun, DM; Han, Z (reprint author), Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Han, Z (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China. |
| Recommended Citation GB/T 7714 | Liu, Wei Lai,Chen, Mao Lin,Li, Xiao Xi,et al. Effect of aging-induced disorder on the quantum transport properties of few-layer WTe2[J]. 2D MATERIALS,2017,4(1):-. |
| APA | Liu, Wei Lai.,Chen, Mao Lin.,Li, Xiao Xi.,Dubey, Sudipta.,Xiong, Ting.,...&Han, Z .(2017).Effect of aging-induced disorder on the quantum transport properties of few-layer WTe2.2D MATERIALS,4(1),-. |
| MLA | Liu, Wei Lai,et al."Effect of aging-induced disorder on the quantum transport properties of few-layer WTe2".2D MATERIALS 4.1(2017):-. |
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