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题名: Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes
作者: Zhang, Zhikun;  Du, Jinhong;  Zhang, Dingdong;  Sun, Hengda;  Yin, Lichang;  Ma, Laipeng;  Chen, Jiangshan;  Ma, Dongge;  Cheng, Hui-Ming;  Ren, Wencai
发表日期: 2017-2-24
摘要: The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm(2). Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15nm and a uniform sheet resistance of 560 Omega per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m(-2) that can already satisfy the requirements for lighting sources and displays.
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Recommended Citation:
Zhang, Zhikun,Du, Jinhong,Zhang, Dingdong,et al. Rosin-enabled Ultraclean And Damage-free Transfer Of Graphene For Large-area Flexible Organic Light-emitting Diodes[J]. Nature Communications,2017,8:-.

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