Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire

IMR OpenIR

	Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire
	Zhang, Xinglai; Liu, Baodan; Liu, Qingyun; Yang, Wenjin; Xiong, Changmin; Li, Jing; Jiang, Xin; Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Xiong, CM (reprint author), Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
	2017-01-25
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	9 期号:3 页码:2669-2677
摘要	The detection of UV-A rays (wavelength of 320-400 nm) using functional semiconductor nanostructures is of great importance in either fundamental research or technological applications. In this work, we report the catalytic synthesis of peculiar bicrystalline GaN nanowires and their utilization for building high-performance optoelectronic nanodevices. The as prepared UV-A photodetector based on individual bicrystalline GaN nanowire demonstrates a fast photoresponse time (144 ms), a high wavelength selectivity (UV-A light response only), an ultrahigh photoresponsivity of 1.74 X 10(7) A/W and EQE of 6.08 X 10(9)%, a sensitivity of 2 X 104%, and a very large on/off ratio of more than two orders, as well as robust photocurrent stability (photocurrent fluctuation of less than 7% among 4000 s), showing predominant advantages in comparison with other peer semiconductor photodetectors. The outstanding optoelectronic performance of the bicrystalline GaN nanowire UV-A photodetector is further analyzed based on a detailed high-resolution transmission electron microscope (HRTEM) study, and the two separated crystal domains within the GaN nanowires, are believed to provide separated and rapid carrier transfer channels. This work paves a solid way toward the integration of high-performance optoelectronic nanodevices based on bicrystalline or horizontally aligned one-dimensional semiconductor nanostructures.; The detection of UV-A rays (wavelength of 320-400 nm) using functional semiconductor nanostructures is of great importance in either fundamental research or technological applications. In this work, we report the catalytic synthesis of peculiar bicrystalline GaN nanowires and their utilization for building high-performance optoelectronic nanodevices. The as prepared UV-A photodetector based on individual bicrystalline GaN nanowire demonstrates a fast photoresponse time (144 ms), a high wavelength selectivity (UV-A light response only), an ultrahigh photoresponsivity of 1.74 X 10(7) A/W and EQE of 6.08 X 10(9)%, a sensitivity of 2 X 104%, and a very large on/off ratio of more than two orders, as well as robust photocurrent stability (photocurrent fluctuation of less than 7% among 4000 s), showing predominant advantages in comparison with other peer semiconductor photodetectors. The outstanding optoelectronic performance of the bicrystalline GaN nanowire UV-A photodetector is further analyzed based on a detailed high-resolution transmission electron microscope (HRTEM) study, and the two separated crystal domains within the GaN nanowires, are believed to provide separated and rapid carrier transfer channels. This work paves a solid way toward the integration of high-performance optoelectronic nanodevices based on bicrystalline or horizontally aligned one-dimensional semiconductor nanostructures.
部门归属	[zhang, xinglai ; liu, baodan ; liu, qingyun ; yang, wenjin ; li, jing ; jiang, xin] chinese acad sci, shenyang natl lab mat sci synl, inst met res, 72 wenhua rd, shenyang 110016, peoples r china ; [xiong, changmin] beijing normal univ, dept phys, beijing 100875, peoples r china
关键词	Gan Bicrystalline Nanowires Hrtem Uv-a Ray Photodetectors
学科领域	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
资助者	National Natural Science Foundation of China [11474024]; Knowledge Innovation Program of Institute of Metal Research, Chinese Academy of Sciences [Y2NCA111A1, Y3NCA111A1]; Youth Innovation Promotion Association, Chinese Academy of Sciences [Y4NC711171]
收录类别	SCI
语种	英语
WOS记录号	WOS:000392909500077
引用统计	被引频次：113[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/78331
专题	中国科学院金属研究所
通讯作者	Liu, BD; Jiang, X (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci SYNL, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China.; Xiong, CM (reprint author), Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Xinglai,Liu, Baodan,Liu, Qingyun,et al. Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(3):2669-2677.
APA	Zhang, Xinglai.,Liu, Baodan.,Liu, Qingyun.,Yang, Wenjin.,Xiong, Changmin.,...&Xiong, CM .(2017).Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire.ACS APPLIED MATERIALS & INTERFACES,9(3),2669-2677.
MLA	Zhang, Xinglai,et al."Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire".ACS APPLIED MATERIALS & INTERFACES 9.3(2017):2669-2677.